型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXBK64N250 | LITTELFUSE |
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Insulated Gate Bipolar Transistor, | |
IXBK64N250 | IXYS |
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Insulated Gate Bipolar Transistor, 75A I(C), 2500V V(BR)CES, N-Channel, TO-264AA, TO-264, | |
IXBK75N170 | IXYS |
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IGBT 1700V 200A 1040W TO264 | |
IXBK75N170 | LITTELFUSE |
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BiMOSFET兼具MOSFET和IGBT的优势。 凭借非外延结构和新的制造工艺,BiMO | |
IXBK75N170A | IXYS |
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BiMOSFETTM Monolithic Bipolar MOS Transistor | |
IXBL60N360 | LITTELFUSE |
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BiMOSFET兼具MOSFET和IGBT的优势。 凭借非外延结构和新的制造工艺,BiMO | |
IXBL64N250 | LITTELFUSE |
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Insulated Gate Bipolar Transistor, 116A I(C), 2500V V(BR)CES, N-Channel, ISOPLUS, I5PAK-4 | |
IXBN42N170A | IXYS |
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Insulated Gate Bipolar Transistor, 42A I(C), 1700V V(BR)CES, N-Channel, MINIBLOC-4 | |
IXBN42N170A | LITTELFUSE |
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Insulated Gate Bipolar Transistor, | |
IXBN75N170 | IXYS |
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Insulated Gate Bipolar Transistor, 145A I(C), 1700V V(BR)CES, N-Channel, MINIBLOC-4 |