Datasheet > IXBK55N300

IXBK55N300

更新时间： 2024-11-18 12:27:43

品牌	Logo	应用领域
IXYS		晶体双极型晶体管
页数	文件大小	规格书
6页	221K
描述
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXBK55N300 数据手册

High Voltage, High Gain

BiMOSFET^TM

V_CES= 3000V

I_C110= 55A

V_CE(sat)≤ 3.2V

IXBK55N300

IXBX55N300

Monolithic Bipolar

MOS Transistor

TO-264 (IXBK)

Symbol

V_CES

Test Conditions

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

Continuous

Maximum Ratings

3000

±25

Tab

V_CGR

V_GES

PLUS247 (IXBX)

V_GEM

Transient

±35

I_C25

T_C= 25°C ( Chip Capability )

T_C= 25°C ( Lead RMS Limit )

T_C= 110°C

130

120

I_LRMS

I_C110

I_CM

T_C= 25°C, 1ms

600

Tab

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 2Ω

I_CM= 110

(RBSOA)

Clamped Inductive Load

@0.8 • V_CES

G = Gate

= Emitter

C = Collector

Tab = Collector

T_SC

V_GE= 15V, T_J= 125°C,

(SCSOA)

R_G= 10Ω, V_CE= 1250V, Non-Repetitive

μs

P_C

T_C= 25°C

625

Features

T_J

-55 ... +150

150

°C

T_JM

T_stg

High Blocking Voltage

International Standard Packages

Low Conduction Losses

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062 in.) from Case for 10

300

260

°C

High Current Handling Capability

MOS Gate Turn-On

M_d

F_C

Mounting Torque (TO-264 )

Mounting Force (PLUS247 )

1.13/10

20..120/4.5..27

Nm/lb.in.

N/lb.

- Drive Simplicity

Weight

TO-264

PLUS247

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

3000

3.0

Typ.

Max.

BV_CES

V_GE(th)

I_CES

I_C= 1mA, V_GE= 0V

I_C= 4mA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

Applications

5.0

Uninterruptible Power Supplies (UPS)

Switch-Mode and Resonant-Mode

50 μA

T_J= 125°C

3 mA

Power Supplies

Capacitor Discharge Circuits

Laser Generators

I_GES

V_CE= 0V, V_GE= ± 25V

±200 nA

V_CE(sat)

I_C= 55A, V_GE= 15V, Note 1

T_J= 125°C

2.7

3.3

3.2

DS100158A(11/11)

12 3 4 5 6

中文翻译

下载PDF

与IXBK55N300相关器件

型号	品牌	获取价格	描述	数据表
IXBK64N250	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,
IXBK64N250	IXYS	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 2500V V(BR)CES, N-Channel, TO-264AA, TO-264,
IXBK75N170	IXYS	获取价格	IGBT 1700V 200A 1040W TO264
IXBK75N170	LITTELFUSE	获取价格	BiMOSFET兼具MOSFET和IGBT的优势。凭借非外延结构和新的制造工艺，BiMO
IXBK75N170A	IXYS	获取价格	BiMOSFETTM Monolithic Bipolar MOS Transistor
IXBL60N360	LITTELFUSE	获取价格	BiMOSFET兼具MOSFET和IGBT的优势。凭借非外延结构和新的制造工艺，BiMO
IXBL64N250	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor, 116A I(C), 2500V V(BR)CES, N-Channel, ISOPLUS, I5PAK-4
IXBN42N170A	IXYS	获取价格	Insulated Gate Bipolar Transistor, 42A I(C), 1700V V(BR)CES, N-Channel, MINIBLOC-4
IXBN42N170A	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,
IXBN75N170	IXYS	获取价格	Insulated Gate Bipolar Transistor, 145A I(C), 1700V V(BR)CES, N-Channel, MINIBLOC-4