Datasheet > IXBK55N300

IXBK55N300

更新时间： 2024-02-12 04:45:02

品牌	Logo	应用领域
IXYS		晶体双极型晶体管
页数	文件大小	规格书
6页	221K
描述
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor

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数据手册

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IXBK55N300 数据手册

High Voltage, High Gain

BiMOSFET^TM

V_CES= 3000V

I_C110= 55A

V_CE(sat)≤ 3.2V

IXBK55N300

IXBX55N300

Monolithic Bipolar

MOS Transistor

TO-264 (IXBK)

Symbol

V_CES

Test Conditions

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

Continuous

Maximum Ratings

3000

±25

Tab

V_CGR

V_GES

PLUS247 (IXBX)

V_GEM

Transient

±35

I_C25

T_C= 25°C ( Chip Capability )

T_C= 25°C ( Lead RMS Limit )

T_C= 110°C

130

120

I_LRMS

I_C110

I_CM

T_C= 25°C, 1ms

600

Tab

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 2Ω

I_CM= 110

(RBSOA)

Clamped Inductive Load

@0.8 • V_CES

G = Gate

= Emitter

C = Collector

Tab = Collector

T_SC

V_GE= 15V, T_J= 125°C,

(SCSOA)

R_G= 10Ω, V_CE= 1250V, Non-Repetitive

μs

P_C

T_C= 25°C

625

Features

T_J

-55 ... +150

150

°C

T_JM

T_stg

High Blocking Voltage

International Standard Packages

Low Conduction Losses

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062 in.) from Case for 10

300

260

°C

High Current Handling Capability

MOS Gate Turn-On

M_d

F_C

Mounting Torque (TO-264 )

Mounting Force (PLUS247 )

1.13/10

20..120/4.5..27

Nm/lb.in.

N/lb.

- Drive Simplicity

Weight

TO-264

PLUS247

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

3000

3.0

Typ.

Max.

BV_CES

V_GE(th)

I_CES

I_C= 1mA, V_GE= 0V

I_C= 4mA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

Applications

5.0

Uninterruptible Power Supplies (UPS)

Switch-Mode and Resonant-Mode

50 μA

T_J= 125°C

3 mA

Power Supplies

Capacitor Discharge Circuits

Laser Generators

I_GES

V_CE= 0V, V_GE= ± 25V

±200 nA

V_CE(sat)

I_C= 55A, V_GE= 15V, Note 1

T_J= 125°C

2.7

3.3

3.2

DS100158A(11/11)

12 3 4 5 6

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