IXBK75N170A

更新时间： 2024-11-05 12:36:43

品牌	Logo	应用领域
IXYS		晶体双极型晶体管
页数	文件大小	规格书
6页	199K
描述
BiMOSFETTM Monolithic Bipolar MOS Transistor

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中文翻译

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数据手册

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IXBK75N170A 数据手册

Advance Technical Information

BiMOSFET^TMMonolithic

Bipolar MOS Transistor

V_CES= 1700V

I_C90= 65A

V_CE(sat)≤ 6.00V

t_fi(typ)= 60ns

IXBK75N170A

IXBX75N170A

TO-264 (IXBK)

Symbol

V_CES

Test Conditions

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

Continuous

Maximum Ratings

1700

±20

V_CGR

V_GES

(TAB)

V_GEM

Transient

±30

PLUS247^TM(IXBX)

I_C25

I_C90

I_CM

T_C= 25°C

110

T_C= 90°C

T_C= 25°C, 1ms

300

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 1Ω

I_CM= 100

(RBSOA)

Clamped Inductive Load

V_CE< 0.8 • V_CES

(TAB)

P_C

T_C= 25°C

1040

T_J

-55 ... +150

150

°C

G = Gate

E = Emitter

= Collector

T_JM

T_stg

TAB = Collector

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062 in.) from Case for 10

300

260

°C

Features

M_d

F_C

Mounting Torque (TO-264 )

Mounting Force (PLUS247 )

1.13/10

20..120/4.5..27

Nm/lb.in.

N/lb.

^zInternational Standard Packages

^zHigh Blocking Voltage

^zFast Switching

^zHigh Current Handling Capability

^zAnti-Parallel Diode

Weight

TO-264

PLUS247

Advantages

^zHigh Power Density

Symbol

Test Conditions

Characteristic Values

^zLow Gate Drive Requirement

^zIntergrated Diode Can Be Used for

Protection

(T_J= 25°C, Unless Otherwise Specified)

Min.

1700

2.5

Typ.

Max.

BV_CES

V_GE(th)

I_C= 250μA, V_GE= 0V

I_C= 1.5mA, V_CE= V_GE

5.5

Applications

I_CES

V_CE= 0.8 • V_CES, V_GE= 0V

50 μA

T_J= 125°C

3 mA

^zSwitched-Mode and Resonant-Mode

Power Supplies

I_GES

V_CE= 0V, V_GE= ± 20V

±100 nA

^zUPS

V_CE(sat)

I_C= 42A, V_GE= 15V, Note 1

T_J= 125°C

4.95

5.15

6.00

^zAC Motor Drives

^zSubstitutes for High Voltage MOSFETs

DS100166(06/09)

12 3 4 5 6

中文翻译

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