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IXBN75N170A PDF预览

IXBN75N170A

更新时间: 2024-11-19 14:56:19
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网双极性晶体管高压功率控制二极管
页数 文件大小 规格书
7页 261K
描述
BiMOSFET兼具MOSFET和IGBT的优势。 凭借非外延结构和新的制造工艺,BiMOSFET大获成功。这种高压器件是并联的理想选择,因为饱和电压和本征二极管的正向压降均具有正电压温度系数。

IXBN75N170A 数据手册

 浏览型号IXBN75N170A的Datasheet PDF文件第2页浏览型号IXBN75N170A的Datasheet PDF文件第3页浏览型号IXBN75N170A的Datasheet PDF文件第4页浏览型号IXBN75N170A的Datasheet PDF文件第5页浏览型号IXBN75N170A的Datasheet PDF文件第6页浏览型号IXBN75N170A的Datasheet PDF文件第7页 
BiMOSFETTM Monolithic  
Bipolar MOS Transistor  
VCES = 1700V  
IC90 = 42A  
IXBN75N170A  
VCE(sat) 6.00V  
tfi(typ) = 60ns  
E
SOT-227B, miniBLOC  
E153432  
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1M  
Continuous  
Maximum Ratings  
E  
1700  
1700  
±20  
V
V
V
V
G
VCGR  
VGES  
VGEM  
Transient  
±30  
E  
IC25  
IC90  
ICM  
TC = 25°C  
75  
42  
A
A
A
C
TC = 90°C  
G = Gate, C = Collector, E = Emitter  
either emitter terminal can be used as  
Main or Kelvin Emitter  
TC = 25°C, 1ms  
350  
SSOA  
VGE= 15V, TVJ = 125°C, RG = 1  
ICM = 100  
A
(RBSOA)  
Clamped Inductive Load  
VCE < 0.8 VCES  
PC  
TC = 25°C  
625  
W
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
International Standard Package  
High Blocking Voltage  
Fast Switching  
Isolation Voltage 3000 V~  
High Current Handling Capability  
Anti-Parallel Diode  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
VISOL  
Md  
50/60Hz  
IISOL 1mA  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
Mounting Torque  
Terminal Connection Torque (M4)  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Advantages  
High Power Density  
Weight  
30  
g
Low Gate Drive Requirement  
Easy to Mount with 2 Screws  
Intergrated Diode Can Be Used for  
Protection  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1700  
2.5  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
V
V
Switched-Mode and Resonant-Mode  
Power Supplies  
IC = 1.5mA, VCE = VGE  
5.5  
ICES  
VCE = 0.8 VCES, VGE = 0V  
50 μA  
UPS  
AC Motor Drives  
TJ = 125C  
TJ = 125C  
3 mA  
Substitutes for High Voltage MOSFET  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = IC90, VGE = 15V, Note 1  
4.95  
5.15  
6.00  
V
V
DS98938B(8/16)  
© 2016 IXYS CORPORATION, All Rights Reserved  

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