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IXBH9N160G PDF预览

IXBH9N160G

更新时间: 2024-11-17 22:12:15
品牌 Logo 应用领域
IXYS 晶体双极型晶体管高压
页数 文件大小 规格书
4页 66K
描述
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

IXBH9N160G 技术参数

是否无铅: 不含铅生命周期:Transferred
Reach Compliance Code:unknown风险等级:3.41
外壳连接:COLLECTOR最大集电极电流 (IC):9 A
集电极-发射极最大电压:1600 V配置:SINGLE WITH BUILT-IN DIODE
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):190 ns标称接通时间 (ton):340 ns
Base Number Matches:1

IXBH9N160G 数据手册

 浏览型号IXBH9N160G的Datasheet PDF文件第2页浏览型号IXBH9N160G的Datasheet PDF文件第3页浏览型号IXBH9N160G的Datasheet PDF文件第4页 
HighVoltage BIMOSFETTM  
Monolithic Bipolar  
MOSTransistor  
IXBH 9N140G VCES = 1400/1600V  
IXBH 9N160G IC25 = 9 A  
VCE(sat) = 4.9 V typ.  
tfi  
= 70 ns  
N-Channel, Enhancement Mode  
MOSFET compatible  
C
E
TO-247 AD  
G
G
C
C (TAB)  
E
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
Preliminary Data  
Symbol  
Conditions  
Maximum Ratings  
9N140G 9N160G  
Features  
• High Voltage BIMOSFETTM  
- replaces high voltage Darlingtons  
and series connected MOSFETs  
- lower effective RDS(on)  
• MOS Gate turn-on  
- drive simplicity  
VCES  
VCGR  
TJ = 25°C to 150°C  
1400  
1400  
1600  
1600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
V
V
±30  
- MOSFET compatible for 10V  
turn on gate voltage  
IC25  
IC90  
ICM  
TC = 25°C,  
9
5
A
A
A
TC = 90°C  
• Monolithic construction  
- high blocking voltage capability  
- very fast turn-off characteristics  
• International standard package  
JEDEC TO-247 AD  
TC = 25°C, 1 ms  
10  
SSOA  
(RBSOA)  
VGE= 10 V, TVJ = 125°C, RG = 27 VCE = 0.8•VCES ICM = 12  
Clamped inductive load, L = 100 µH  
A
C4  
• Reverse conducting capability  
PC  
TC = 25°C  
100  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
°C  
TJM  
Tstg  
TL  
Applications  
-55 ... +150  
300  
• Flyback converters  
• DC choppers  
1.6 mm (0.063 in) from case for 10 s  
Mounting torque  
• Uninterruptiblepowersupplies(UPS)  
• Switched-modeandresonant-mode  
powersupplies  
Md  
1.15/10 Nm/lb.in.  
Weight  
6
g
• CRTdeflection  
• Lampballasts  
Symbol  
BVCES  
Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Advantages  
IC = 0.25 mA, VGE = 0 V 9N140G  
9N160G  
1400  
1600  
V
V
• Easy to mount with 1 screw  
(isolatedmountingscrewhole)  
• Space savings  
VGE(th)  
ICES  
IC = 0.5 mA, VCE = VGE  
3.5  
5.5  
V
• High power density  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
100 µA  
0.1  
mA  
IGES  
VCE = 0 V, VGE = ±20 V  
± 500 nA  
VCE(sat)  
IC = IC90, VGE = 15 V  
4.9  
5.6  
7
V
V
TJ = 125°C  
© 2000 IXYS All rights reserved  
IXYS Semiconductor GmbH  
1 - 4  
IXYS Corporation  
Edisonstr. 15,  
Phone: +49-6206-503-0, Fax: +49-6206-503627  
D-68623 Lampertheim  
3540 Bassett Street, Santa Clara CA 95054  
Phone: (408) 982-0700, Fax: 408-496-0670  

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