Datasheet > IXBJ40N140

IXBJ40N140

更新时间： 2024-09-25 23:59:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管双极性晶体管
页数	文件大小	规格书
4页	108K
描述
TRANSISTOR \| IGBT \| N-CHAN \| 1.4KV V(BR)CES \| 33A I(C) \| TO-268

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中文翻译

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数据手册

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IXBJ40N140 数据手册

High Voltage BIMOSFET^TM

Monolithic Bipolar

MOS Transistor

IXBJ 40N140 V_CES= 1400/1600V

IXBJ 40N160 I_C25= 33 A

V_CE(sat)= 7.1 V

t_fi

= 40 ns

N-Channel, Enhancement Mode

Symbol

Test Conditions

Maximum Ratings

40N140 40N160

TO-268

V_CES

V_CGR

T_J= 25°C to 150°C

1400

1600

T_J= 25°C to 150°C; R_GE= 1 MW

C (TAB)

V_GES

V_GEM

Continuous

Transient

±20

±30

G = Gate

C = Collector

I_C25

I_C90

I_CM

T_C= 25°C,

= Emitter TAB = Collector

T_C= 90°C

T_C= 25°C, 1 ms

SSOA

V_GE= 15 V, T_VJ= 125°C, R_G= 22 Ω; V_CE= 0.8 V_CES

I_CM= 40

(RBSOA)

Clamped inductive load, L = 100 mH

Features

P_C

T_C= 25°C

350

LeadedTO-268package

T_J

-55 ... +150 °C

150 °C

HighVoltageBIMOSFET^TM

T_JM

T_stg

- replaceshighvoltageDarlingtons

and series connected MOSFETs

- lower effective R_DS(on)

Monolithicconstruction

- highblockingvoltagecapability

- very fast turn-off characteristics

-55 ... +150 °C

T_L

1.6 mm (0.063 in) from case for 10 s

Mountingtorque

300 °C

M_d

1.15/10 Nm/lb.in.

MOS Gate turn-on

- drive simplicity

Weight

Intrinsicdiode

Applications

Symbol

BV_CES

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

AC motor speed control

DC servo and robot drives

DC choppers

I_C= 1 mA, V_GE= 0 V

I_C= 2 mA, V_CE= V_GE

40N140

40N160

1400

1600

Uninterruptiblepowersupplies(UPS)

Switched-modeandresonant-mode

powersupplies

V_GE(th)

I_CES

CRTdeflection

V_CE= 0.8 • V_CES

V_GE= 0 V

T_J= 25°C

T_J= 125°C

400 µA

Lampballasts

I_GES

V_CE= 0 V, V_GE= ±20 V

I_C= I_C90, V_GE= 15 V

± 500 nA

Advantages

V_CE(sat)

6.2

7.1

7.8

Space savings

T_J= 125°C

High power density

IXYS reserves the right to change limits, test conditions, and dimensions.

98662(10/99)

C4 - 26

12 3 4

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