Datasheet > IXBH42N250

IXBH42N250

更新时间： 2024-11-06 14:56:11

品牌	Logo	应用领域
力特 - LITTELFUSE		双极性晶体管高压二极管
页数	文件大小	规格书
7页	281K
描述
BiMOSFET兼具MOSFET和IGBT的优势。凭借非外延结构和新的制造工艺，BiMOSFET大获成功。这种高压器件是并联的理想选择，因为饱和电压和本征二极管的正向压降均具有正电压温度系数。

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数据手册

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IXBH42N250 数据手册

Advance Technical Information

High Voltage, High Gain

BIMOSFET^TMMonolithic

Bipolar MOS Transistor

V_CES= 2500V

I_C110= 42A

V_CE(sat) 3.0V

IXBH42N250

TO-247 AD

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_C= 25°C to 150°C

2500

Tab

T_J= 25°C to 150°C, R_GE= 1M

V_GES

V_GEM

Continuous

Transient

± 25

± 35

G = Gate

E = Emitter

Collector

Tab = Collector

I_C25

I_C110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1ms

104

400

SSOA

(RBSOA)

_GE= 15V, T_VJ= 125°C, R_G= 20

I_CM= 84

1250

Clamped Inductive Load

T_SC

(SCSOA)

V_GE= 15V, T_J= 125°C,

R_G= 82, V_CE=1250V, Non-Repetitive

Features

μs

P_C

T_C= 25°C

500



High Blocking Voltage

^International Standard Package

^Anti-Parallel Diode

T_J

-55 ... +150

150

°C

T_JM

T_stg

^Low Conduction Losses

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Advantages

M_d

Mounting Torque

1.13/10

Nm/lb.in

^Low Gate Drive Requirement

^High Power Density

Weight

Applications

Symbol Test Conditions

(T_J= 25°C Unless Otherwise Specified)

Characteristic Values

^Switch-Mode and Resonant-Mode

Power Supplies

Min.

Typ.

Max.

BV_CES

V_GE(th)

I_C= 1mA, V_GE= 0V

I_C= 1mA, V_CE= V_GE

2500

3.0

^Uninterruptible Power Supplies (UPS)

^Laser Generators

5.0

^Capacitor Discharge Circuits

^AC Switches

I_CES

V_CE= 0.8 • V_CES, V_GE= 0V

50 μA

μA

T_J= 125°C

250

I_GES

V_CE= 0V, V_GE= ± 25V

±200 nA

V_CE(sat)

I_C= 42A, V_GE= 15V, Note 1

2.5

3.1

3.0

T_J= 125°C

DS100587(01/14)

12 3 4 5 6 7

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