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IXBH5N160G PDF预览

IXBH5N160G

更新时间: 2024-11-18 20:06:07
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网功率控制晶体管
页数 文件大小 规格书
3页 78K
描述
Insulated Gate Bipolar Transistor,

IXBH5N160G 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.72
Is Samacsys:NBase Number Matches:1

IXBH5N160G 数据手册

 浏览型号IXBH5N160G的Datasheet PDF文件第2页浏览型号IXBH5N160G的Datasheet PDF文件第3页 
IXBP 5N160 G  
IXBH 5N160 G  
IC25  
= 5.7 A  
High Voltage  
BIMOSFETTM  
VCES = 1600 V  
VCE(sat) = 4.9 V  
tf  
= 70 ns  
Monolithic Bipolar MOS Transistor  
C
TO-220 AB (IXBP)  
Preliminary data sheet  
G
C
E
C (TAB)  
G
E
TO-2
G
C
E
AB)  
A = Anode, C = Cathode , TAB = Cathode  
IGBT  
Features  
• High Voltage BIMOSFETTM  
- substitute for high voltage MOSFETs  
with significantly lower voltage drop  
- MOSFET compatible control  
10 V turn on gate voltage  
- fast switching for high frequency  
operation  
Symbol  
VCES  
Conditions  
Maximum Ratings  
TVJ = 25°C to 150°C  
1600  
V
V
±
VGES  
20  
IC25  
IC90  
TC = 25°C  
TC = 90°C  
5.7  
3.5  
A
A
- reverse conduction capability  
• industry standard package  
- TO-220AB  
10/0  
ICM  
VCEK  
VGE  
=
V; RG = 47 ; TVJ = 125°C  
6
A
RBSOA, Clamped inductive load; L = 100 µH  
0.8VCES  
- TO-247AD  
Ptot  
TC = 25°C  
68  
W
epoxy meets UL94V-0  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
Applications  
• switched mode power supplies  
• DC-DC converters  
min.  
typ. max.  
VCE(sat)  
IC = 3 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
4.9  
5.6  
7.2  
V
V
• resonant converters  
• lamp ballasts  
• laser generators, x ray generators  
VGE(th)  
ICES  
IC = 0.3 mA; VGE = VCE  
3.5  
5.5  
V
VGE = 0 V; VCE = VCES  
;
TVJ = 25°C  
150 µA  
µA  
VCE = 0.8VCES; TVJ = 125°C  
50  
±
IGES  
VCE = 0 V; VGE  
=
20 V  
100 nA  
td(on)  
tr  
td(off)  
tf  
140  
200  
120  
70  
ns  
ns  
ns  
ns  
Inductive load, TVJ = 125°C  
VCE = 960 V; IC = 3 A  
10/0  
VGE  
=
V; RG = 47 Ω  
Cies  
QGon  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE = 600V; VGE = 10 V; IC = 3 A  
325  
26  
pF  
nC  
VF  
(reverse conduction); IF = 3 A  
6
V
RthJC  
1.85 K/W  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2003 IXYS All rights reserved  
1 - 2  
IXYS Semiconductor GmbH  
IXYS Corporation  
Edisonstr. 15,  
Phone: +49-6206-503-0, Fax: +49-6206-503627  
D-68623 Lampertheim  
3540 Bassett Street, Santa Clara CA 95054  
Phone: (408) 982-0700, Fax: 408-496-0670  

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