Datasheet > IXBH6N170

IXBH6N170

更新时间： 2024-02-21 15:53:55

品牌	Logo	应用领域
力特 - LITTELFUSE		双极性晶体管高压二极管
页数	文件大小	规格书
6页	207K
描述
BiMOSFET兼具MOSFET和IGBT的优势。凭借非外延结构和新的制造工艺，BiMOSFET大获成功。这种高压器件是并联的理想选择，因为饱和电压和本征二极管的正向压降均具有正电压温度系数。

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中文翻译

获取价格

数据手册

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IXBH6N170 数据手册

High Voltage, High Gain

BIMOSFET^TMMonolithic

Bipolar MOS Transistor

V_CES= 1700V

I_C90= 6A

IXBH6N170

IXBT6N170

V_CE(sat)≤ 3.4V

TO-247 (IXBH)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_C= 25°C to 150°C

1700

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

± 20

± 30

C (TAB)

I_C25

I_C90

I_CM

T_C= 25°C

TO-268 (IXBT)

T_C= 90°C

T_C= 25°C, 1ms

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 24Ω

I_CM= 16

(RBSOA)

Clamped inductive load

V_CES≤ 1350

C (TAB)

P_C

T_C= 25°C

T_J

-55 ... +150

150

°C

G = Gate

E = Emitter

= Collector

TAB = Collector

T_JM

T_stg

-55 ... +150

T_L

T_SOLD

1.6mm (0.062 in.) from case for 10s

Plastic body for 10 seconds

300

260

°C

Features

M_d

Mounting torque (TO-247)

1.13/10

Nm/lb.in.

High blocking voltage

^zIntegrated Anti-parallel diode

^zInternational standard packages

^zLow conduction losses

Weight

TO-247

TO-268

Advantages

^zLow gate drive requirement

^zHigh power density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

BV_CES

V_GE(th)

I_C= 250μA, V_CE= V_GE

1700

Applications:

2.5

5.5

^zSwitched-mode and resonant-mode

power supplies

I_CES

V_CE= 0.8 • V_CES

μA

^zUninterruptible power supplies (UPS)

^zLaser generator

V_GE= 0V

T_J= 125°C

100

I_GES

V_CE= 0V, V_GE= ±20V

±100 nA

^zCapacitor discharge circuit

^zAC switches

V_CE(sat)

I_C= 6A, V_GE= 15V, Note 1

2.84

3.46

3.40

DS99004C(10/08)

12 3 4 5 6

中文翻译

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