Datasheet > IXBH6N170

IXBH6N170

更新时间： 2024-11-05 03:14:47

品牌	Logo	应用领域
IXYS		晶体双极型晶体管
页数	文件大小	规格书
2页	113K
描述
High Voltage, High Gain BIMOSFET⑩ Monolithic Bipolar MOS Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXBH6N170 数据手册

Advanced Technical Information

V_CES= 1700 V

I_C2512 A

V_CE(sat)= 3.6 V

HighVoltage,HighGain

BIMOSFET^TMMonolithic

Bipolar MOS Transistor

IXBH 6N170

IXBT 6N170

Symbol

TestConditions

Maximum Ratings

TO-268(IXBT)

V_CES

V_CGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GE= 1 MΩ

1700

V_GES

V_GEM

Continuous

Transient

±20

±30

(TAB)

I_C25

I_C90

I_CM

T_C= 25°C

T_C= 90°C

T_C= 25°C, 1 ms

TO-247AD(IXBH)

SSOA

V_GE= 15 V, T_VJ= 125°C, R_G= 33 Ω

I_CM

C (TAB)

(RBSOA)

Clamped inductive load

V_CES

1350

P_C

T_C= 25°C

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

G = Gate,

C = Collector,

E=Emitter,

TAB = Collector

Features

Maximum Lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

High Blocking Voltage

JEDEC TO-268 surface and

JEDEC TO-247 AD

Maximum Tab temperature for soldering SMD devices for 10 s

260

°C

Low conduction losses

M_d

Mounting torque (M3)

1.13/10Nm/lb.in.

High current handling capability

Weight

TO-247 AD

TO-268

MOS Gate turn-on

- drive simplicity

Molding epoxies meet UL 94 V-0

flammability classification

Applications

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

AC motor speed control

Uninterruptible power supplies (UPS)

Switched-mode and resonant-mode

BV_CES

V_GE(th)

= 250 µA, V_GE= 0 V

1700

3.0

I^C_C= 250 µA, V = V_GE

power supplies

Capacitor discharge circuits

I_CES

V_CE= 0.8 V_CES

V_GE= 0 V

T = 25°C

T_J^J= 125°C

10 µA

Advantages

100 µA

High power density

I_GES

V_CE= 0 V, V_GE= ±20 V

±100 nA

Suitable for surface mounting

V_CE(sat)

I_C= I_C90, V_GE= 15 V

3.0

3.3

3.6

Easy to mount with 1 screw,

(isolated mounting screw hole)

T_J= 125°C

DS99004(02/03)

中文翻译

下载PDF

与IXBH6N170相关器件

型号	品牌	获取价格	描述	数据表
IXBH9N140	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.4KV V(BR)CES \| 9A I(C) \| TO-247AD
IXBH9N140G	IXYS	获取价格	High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
IXBH9N160	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.6KV V(BR)CES \| 9A I(C) \| TO-247AD
IXBH9N160G	IXYS	获取价格	High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
IXBH9N160G	LITTELFUSE	获取价格	BiMOSFET兼具MOSFET和IGBT的优势。凭借非外延结构和新的制造工艺，BiMO
IXBJ40N140	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.4KV V(BR)CES \| 33A I(C) \| TO-268
IXBJ40N160	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.6KV V(BR)CES \| 33A I(C) \| TO-268
IXBK55N300	IXYS	获取价格	High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor
IXBK64N250	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,
IXBK64N250	IXYS	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 2500V V(BR)CES, N-Channel, TO-264AA, TO-264,