Datasheet > IXBH6N170

IXBH6N170

更新时间： 2024-11-18 03:14:47

品牌	Logo	应用领域
IXYS		晶体双极型晶体管
页数	文件大小	规格书
2页	113K
描述
High Voltage, High Gain BIMOSFET⑩ Monolithic Bipolar MOS Transistor

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中文翻译

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数据手册

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IXBH6N170 数据手册

Advanced Technical Information

V_CES= 1700 V

I_C2512 A

V_CE(sat)= 3.6 V

HighVoltage,HighGain

BIMOSFET^TMMonolithic

Bipolar MOS Transistor

IXBH 6N170

IXBT 6N170

Symbol

TestConditions

Maximum Ratings

TO-268(IXBT)

V_CES

V_CGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GE= 1 MΩ

1700

V_GES

V_GEM

Continuous

Transient

±20

±30

(TAB)

I_C25

I_C90

I_CM

T_C= 25°C

T_C= 90°C

T_C= 25°C, 1 ms

TO-247AD(IXBH)

SSOA

V_GE= 15 V, T_VJ= 125°C, R_G= 33 Ω

I_CM

C (TAB)

(RBSOA)

Clamped inductive load

V_CES

1350

P_C

T_C= 25°C

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

G = Gate,

C = Collector,

E=Emitter,

TAB = Collector

Features

Maximum Lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

High Blocking Voltage

JEDEC TO-268 surface and

JEDEC TO-247 AD

Maximum Tab temperature for soldering SMD devices for 10 s

260

°C

Low conduction losses

M_d

Mounting torque (M3)

1.13/10Nm/lb.in.

High current handling capability

Weight

TO-247 AD

TO-268

MOS Gate turn-on

- drive simplicity

Molding epoxies meet UL 94 V-0

flammability classification

Applications

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

AC motor speed control

Uninterruptible power supplies (UPS)

Switched-mode and resonant-mode

BV_CES

V_GE(th)

= 250 µA, V_GE= 0 V

1700

3.0

I^C_C= 250 µA, V = V_GE

power supplies

Capacitor discharge circuits

I_CES

V_CE= 0.8 V_CES

V_GE= 0 V

T = 25°C

T_J^J= 125°C

10 µA

Advantages

100 µA

High power density

I_GES

V_CE= 0 V, V_GE= ±20 V

±100 nA

Suitable for surface mounting

V_CE(sat)

I_C= I_C90, V_GE= 15 V

3.0

3.3

3.6

Easy to mount with 1 screw,

(isolated mounting screw hole)

T_J= 125°C

DS99004(02/03)

中文翻译

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