Datasheet > IXBH42N170A

IXBH42N170A

更新时间： 2024-11-21 14:56:47

品牌	Logo	应用领域
力特 - LITTELFUSE		双极性晶体管高压二极管
页数	文件大小	规格书
7页	263K
描述
BiMOSFET兼具MOSFET和IGBT的优势。凭借非外延结构和新的制造工艺，BiMOSFET大获成功。这种高压器件是并联的理想选择，因为饱和电压和本征二极管的正向压降均具有正电压温度系数。

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中文翻译

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数据手册

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IXBH42N170A 数据手册

Preliminary Technical Information

High Voltage, High Gain

V_CES= 1700V

I_C90= 21A

V_CE(sat)≤ 6.0V

IXBT42N170A

IXBH42N170A

BIMOSFET^TMMonolithic

Bipolar MOS Transistor

t_fi

= 20ns

TO-268 (IXBT)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_C= 25°C to 150°C

1700

C (Tab)

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

± 20

± 30

TO-247 (IXBH)

I_C25

I_C90

I_CM

T_C= 25°C

T_C= 90°C

T_C= 25°C, 1ms

265

C (Tab)

SSOA

(RBSOA)

_GE= 15V, T_VJ= 125°C, R_G= 10Ω

I_CM= 84

1360

Clamped Inductive Load

T_SC

(SCSOA)

V_GE= 15 V, V_CES=1200V, T_J= 125°C

R_G= 10Ω, non repetitive

G = Gate

E = Emiiter

= Collector

µs

Tab = Collector

P_C

T_C= 25°C

357

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

Features

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

High Blocking Voltage

^zInternational Standard Packages

^zAnti-Parallel Diode

^zLow Conduction Losses

M_d

Mounting Torque (TO-247)

1.13/10

Nm/lb.in.

Weight

TO-268

TO-247

Advantages

^zLow Gate Drive Requirement

^zHigh Power Density

Symbol Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

Applications

BV_CES

V_GE(th)

I_C= 250µA, V_GE= 0V

I_C= 750µA, V_CE= V_GE

1700

2.5

^zSwitch-Mode and Resonant-Mode

Power Supplies

5.5

^zUninterruptible Power Supplies (UPS)

^zAC Motor Drives

I_CES

V_CE= 0.8 • V_CES, V_GE= 0V

50 µA

1.5 mA

T_J= 125°C

^zCapacitor Discharge Circuits

^zAC Switches

I_GES

V_CE= 0V, V_GE= ± 20V

±100 nA

V_CE(sat)

I_C= I_C90, V_GE= 15V, Note 1

5.2

5.3

6.0

T_J= 125°C

DS98939A(11/12)

12 3 4 5 6 7

中文翻译

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