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IXBH5N160G PDF预览

IXBH5N160G

更新时间: 2024-11-05 12:26:19
品牌 Logo 应用领域
IXYS 晶体晶体管功率控制双极性晶体管高压局域网
页数 文件大小 规格书
2页 45K
描述
High Voltage BIMOSFETTM

IXBH5N160G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:TO-247AD
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:8.48
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):5.7 A集电极-发射极最大电压:1600 V
配置:SINGLE WITH BUILT-IN DIODE门极发射器阈值电压最大值:5.5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):68 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):190 ns标称接通时间 (ton):340 ns
Base Number Matches:1

IXBH5N160G 数据手册

 浏览型号IXBH5N160G的Datasheet PDF文件第2页 
IXBP 5N160 G  
IXBH 5N160 G  
IC25  
= 5.7 A  
High Voltage  
BIMOSFETTM  
VCES = 1600 V  
VCE(sat) = 4.9 V  
tf  
= 70 ns  
Monolithic Bipolar MOS Transistor  
C
TO-220 AB (IXBP)  
Preliminary data sheet  
G
C
E
C (TAB)  
G
E
TO-2
G
C
E
AB)  
A = Anode, C = Cathode , TAB = Cathode  
IGBT  
Features  
• High Voltage BIMOSFETTM  
- substitute for high voltage MOSFETs  
with significantly lower voltage drop  
- MOSFET compatible control  
10 V turn on gate voltage  
- fast switching for high frequency  
operation  
Symbol  
VCES  
Conditions  
Maximum Ratings  
TVJ = 25°C to 150°C  
1600  
V
V
±
VGES  
20  
IC25  
IC90  
TC = 25°C  
TC = 90°C  
5.7  
3.5  
A
A
- reverse conduction capability  
• industry standard package  
- TO-220AB  
10/0  
ICM  
VCEK  
VGE  
=
V; RG = 47 ; TVJ = 125°C  
6
A
RBSOA, Clamped inductive load; L = 100 µH  
0.8VCES  
- TO-247AD  
Ptot  
TC = 25°C  
68  
W
epoxy meets UL94V-0  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
Applications  
• switched mode power supplies  
• DC-DC converters  
min.  
typ. max.  
VCE(sat)  
IC = 3 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
4.9  
5.6  
7.2  
V
V
• resonant converters  
• lamp ballasts  
• laser generators, x ray generators  
VGE(th)  
ICES  
IC = 0.3 mA; VGE = VCE  
3.5  
5.5  
V
VGE = 0 V; VCE = VCES  
;
TVJ = 25°C  
150 µA  
µA  
VCE = 0.8VCES; TVJ = 125°C  
50  
±
IGES  
VCE = 0 V; VGE  
=
20 V  
100 nA  
td(on)  
tr  
td(off)  
tf  
140  
200  
120  
70  
ns  
ns  
ns  
ns  
Inductive load, TVJ = 125°C  
VCE = 960 V; IC = 3 A  
10/0  
VGE  
=
V; RG = 47 Ω  
Cies  
QGon  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE = 600V; VGE = 10 V; IC = 3 A  
325  
26  
pF  
nC  
VF  
(reverse conduction); IF = 3 A  
6
V
RthJC  
1.85 K/W  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2003 IXYS All rights reserved  
1 - 2  
IXYS Semiconductor GmbH  
IXYS Corporation  
Edisonstr. 15,  
Phone: +49-6206-503-0, Fax: +49-6206-503627  
D-68623 Lampertheim  
3540 Bassett Street, Santa Clara CA 95054  
Phone: (408) 982-0700, Fax: 408-496-0670  

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