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IXBH40N140 PDF预览

IXBH40N140

更新时间: 2024-09-14 22:45:43
品牌 Logo 应用领域
IXYS 晶体晶体管电动机控制双极性晶体管高压局域网
页数 文件大小 规格书
4页 64K
描述
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor - N-Channel, Enhancement Mode

IXBH40N140 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-247AD包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
风险等级:5.72Is Samacsys:N
其他特性:BIPOLAR MOS TRANSISTOR WITH COLLECTOR-EMITTER ON RESISTANCE OF 0.24 OHMS外壳连接:COLLECTOR
最大集电极电流 (IC):33 A集电极-发射极最大电压:1400 V
配置:SINGLE WITH BUILT-IN DIODE最大降落时间(tf):700 ns
门极发射器阈值电压最大值:6 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
功耗环境最大值:300 W最大功率耗散 (Abs):300 W
认证状态:Not Qualified最大上升时间(tr):150 ns
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):310 ns
标称接通时间 (ton):260 nsVCEsat-Max:6 V
Base Number Matches:1

IXBH40N140 数据手册

 浏览型号IXBH40N140的Datasheet PDF文件第2页浏览型号IXBH40N140的Datasheet PDF文件第3页浏览型号IXBH40N140的Datasheet PDF文件第4页 
High Voltage BIMOSFETTM  
Monolithic Bipolar  
IXBH 40N140 VCES = 1400/1600V  
IXBH 40N160 IC25 = 33 A  
MOS Transistor  
VCE(sat) = 6.2 V typ.  
N-Channel, Enhancement Mode  
tfi  
= 40 ns  
C
E
TO-247 AD  
G
G
C
C (TAB)  
E
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
Symbol  
Conditions  
Maximum Ratings  
Features  
40N140  
40N160  
• Internationalstandardpackage  
JEDEC TO-247 AD  
VCES  
VCGR  
TJ = 25°C to 150°C  
1400  
1400  
1600  
1600  
V
V
• HighVoltageBIMOSFETTM  
TJ = 25°C to 150°C; RGE = 1 MW  
- replaceshighvoltageDarlingtons  
and series connected MOSFETs  
- lower effective RDS(on)  
• Monolithicconstruction  
- highblockingvoltagecapability  
- very fast turn-off characteristics  
• MOS Gate turn-on  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
IC90  
ICM  
TC = 25°C,  
33  
20  
40  
A
A
A
TC = 90°C  
TC = 25°C, 1 ms  
- drive simplicity  
• Intrinsicdiode  
SSOA  
(RBSOA)  
VGE = 15 V, TVJ = 125°C, RG = 22 W VCE = 0.8•VCES ICM = 40  
Clamped inductive load, L = 100 mH  
A
Applications  
PC  
TC = 25°C  
350  
W
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
• Uninterruptiblepowersupplies(UPS)  
• Switched-modeandresonant-mode  
powersupplies  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
°C  
TJM  
Tstg  
TL  
-55 ... +150  
300  
1.6 mm (0.063 in) from case for 10 s  
Mounting torque  
• CRTdeflection  
• Lampballasts  
Md  
1.15/10 Nm/lb.in.  
Weight  
6
g
Advantages  
Symbol  
BVCES  
Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
• Easy to mount with 1 screw  
(isolatedmountingscrewhole)  
• Space savings  
min. typ. max.  
• High power density  
IC = 1 mA, VGE = 0 V  
IC = 2 mA, VCE = VGE  
40N140  
40N160  
1400  
1600  
V
V
VGE(th)  
ICES  
4
8
V
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
400 mA  
mA  
3
IGES  
VCE = 0 V, VGE = ±20 V  
± 500 nA  
VCE(sat)  
IC = IC90, VGE = 15 V  
6.2  
7.1  
7.8  
V
V
TJ = 125°C  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
1 - 4  

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