5秒后页面跳转
IXBH42N170 PDF预览

IXBH42N170

更新时间: 2024-11-19 14:56:11
品牌 Logo 应用领域
力特 - LITTELFUSE 双极性晶体管高压二极管
页数 文件大小 规格书
6页 203K
描述
BiMOSFET兼具MOSFET和IGBT的优势。 凭借非外延结构和新的制造工艺,BiMOSFET大获成功。这种高压器件是并联的理想选择,因为饱和电压和本征二极管的正向压降均具有正电压温度系数。

IXBH42N170 数据手册

 浏览型号IXBH42N170的Datasheet PDF文件第2页浏览型号IXBH42N170的Datasheet PDF文件第3页浏览型号IXBH42N170的Datasheet PDF文件第4页浏览型号IXBH42N170的Datasheet PDF文件第5页浏览型号IXBH42N170的Datasheet PDF文件第6页 
High Voltage, High Gain  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
VCES = 1700V  
IC90 = 42A  
VCE(sat) 2.8V  
IXBH42N170  
IXBT42N170  
TO-247 (IXBH)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TC = 25°C to 150°C  
1700  
1700  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
C (TAB)  
C
E
IC25  
ILRMS  
IC90  
ICM  
TC = 25°C  
80  
75  
A
A
A
A
Terminal Current Limit  
TC = 90°C  
TO-268 (IXBT)  
42  
TC = 25°C, 1ms  
300  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 10Ω  
ICM = 100  
A
V
G
E
(RBSOA)  
Clamped inductive load  
VCES 1350  
C (TAB)  
PC  
TC = 25°C  
360  
W
G = Gate  
E = Emitter  
C
= Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TAB = Collector  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Features  
z
High blocking voltage  
Md  
Mounting torque (TO-247)  
1.13/10  
Nm/lb.in.  
z International standard packages  
z Low conduction losses  
Weight  
TO-247  
TO-268  
6
4
g
g
Advantages  
z Low gate drive requirement  
z High power density  
Symbol Test Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic Values  
Min. Typ. Max.  
Applications:  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
1700  
2.5  
V
V
z Switched-mode and resonant-mode  
power supplies  
5.5  
z Uninterruptible power supplies (UPS)  
z Laser generator  
ICES  
VCE = 0.8 • VCES  
VGE = 0V  
50 μA  
1.5 mA  
z Capacitor discharge circuit  
z AC switches  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = 42A, VGE = 15V, Note 1  
2.8  
V
V
TJ = 125°C  
2.7  
© 2008 IXYS CORPORATION, All rights reserved  
DS98710C(10/08)  

与IXBH42N170相关器件

型号 品牌 获取价格 描述 数据表
IXBH42N170A IXYS

获取价格

BIMOSFET Monolithic Bipolar MOS Transistor
IXBH42N170A LITTELFUSE

获取价格

BiMOSFET兼具MOSFET和IGBT的优势。 凭借非外延结构和新的制造工艺,BiMO
IXBH42N250 LITTELFUSE

获取价格

BiMOSFET兼具MOSFET和IGBT的优势。 凭借非外延结构和新的制造工艺,BiMO
IXBH5N160G IXYS

获取价格

High Voltage BIMOSFETTM
IXBH5N160G LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor,
IXBH6N170 IXYS

获取价格

High Voltage, High Gain BIMOSFET⑩ Monolithic
IXBH6N170 LITTELFUSE

获取价格

BiMOSFET兼具MOSFET和IGBT的优势。 凭借非外延结构和新的制造工艺,BiMO
IXBH9N140 ETC

获取价格

TRANSISTOR | IGBT | N-CHAN | 1.4KV V(BR)CES | 9A I(C) | TO-247AD
IXBH9N140G IXYS

获取价格

High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
IXBH9N160 ETC

获取价格

TRANSISTOR | IGBT | N-CHAN | 1.6KV V(BR)CES | 9A I(C) | TO-247AD