Datasheet > IRF7N1405_07

IRF7N1405_07

更新时间： 2024-11-20 03:35:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	196K
描述
HEXFET POWER MOSFET SURFACE MOUNT (SMD-1)

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IRF7N1405_07 数据手册

PD - 94643A

HEXFET^®POWER MOSFET

SURFACE MOUNT (SMD-1)

IRF7N1405

55V, N-CHANNEL

Product Summary

Part Number

RDS(on)

DSS

IRF7N1405

55V

0.0053Ω 55A*

Seventh Generation HEXFET^®power MOSFETs from

International Rectifier utilize advanced processing

techniquestoachievethelowestpossibleon-resistance

per silicon unit area. This benefit, combined with the

fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

providesthedesignerwithanextremelyefficientdevice

for use in a wide variety of applications.

SMD-1

Features:

Low RDS(on)

Avalanche Energy Ratings

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

These devices are well-suited for applications such

as switching power supplies, motor controls, inverters,

choppers, audio amplifiers and high-energy pulse

circuits.

Surface Mount

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

55*

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

220

@ T = 25°C

100

W/°C

0.8

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

245

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

dv/dt

1.8

-55 to 150

Storage Temperature Range

Package Mounting Surface Temp.

Weight

^oC

STG

300 (for 5s)

2.6 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

03/16/07

12 3 4 5 6 7

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