IRF7413ZTR

更新时间： 2024-11-20 12:36:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	272K
描述
Control FET for Notebook Processor Power

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中文翻译

获取价格

数据手册
替代型号

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IRF7413ZTR 数据手册

PD - 94646A

IRF7413Z

HEXFET^®Power MOSFET

Applications

l Control FET for Notebook Processor

Power

V_DSS

30V

R_DS(on)max

10m:@V_GS= 10V

I_D

13A

l Control and Synchronous Rectifier

MOSFET for Graphics Cards and POL

Converters in Computing, Networking

and Telecommunication Systems

Benefits

l Ultra-Low Gate Impedance

SO-8

l Very Low R_DS(on)

Top View

l Fully Characterized Avalanche Voltage

and Current

l 100%TestedforR_G

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

100

2.5

1.6

@T_A= 25°C

@T_A= 70°C

Power Dissipation

Linear Derating Factor

Operating Junction and

0.02

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

°C/W

R_θJL

R_θJA

–––

Notes through are on page 10

www.irf.com

6/30/05

12 3 4 5 6 7...10

中文翻译

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IRF7413ZTR 替代型号

型号	品牌	替代类型	描述	数据表
IRF7413ZTRPBF	INFINEON	类似代替	Control FET for Notebook Processor Power

与IRF7413ZTR相关器件

型号	品牌	获取价格	描述	数据表
IRF7413ZTRPBF	INFINEON	获取价格	Control FET for Notebook Processor Power
IRF7413ZUPBF	INFINEON	获取价格	HEXFT Power MOSFET
IRF7413ZUTRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRF7416	INFINEON	获取价格	Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm)
IRF7416PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF7416PBF-1	INFINEON	获取价格	Power Field-Effect Transistor
IRF7416QPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF7416QTRPBF	INFINEON	获取价格	Transistor,
IRF7416TR	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Meta
IRF7416TR	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C