Datasheet > IRF7420TRPBF-1

IRF7420TRPBF-1

更新时间： 2024-11-19 14:15:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	190K
描述
Power Field-Effect Transistor

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中文翻译

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数据手册

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IRF7420TRPBF-1 数据手册

IRF7420PbF-1

HEXFET^®Power MOSFET

V_DS

-12

R_{DS(on) max}

(@V_GS= -4.5V)

R_{DS(on) max}

(@V_GS= -2.5V)

R_{DS(on) max}

(@V_GS= -1.8V)

Q_{g (typical)}

17.5

SO-8

Top View

I_D

-11.5

(@T_A= 25°C)

Features

Industry-standard pinout SO-8 Package

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

Benefits

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

MSL1, Industrial qualification

Standard Pack

Form

Base Part Number

Package Type

Orderable Part Number

Quantity

Tube/Bulk

Tape and Reel

4000

IRF7420PbF-1

IRF7420TRPbF-1

IRF7420PbF-1

SO-8

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

-12

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-11.5

-9.2

-46

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

2.5

1.6

Linear Derating Factor

mW/°C

V_GS

Gate-to-Source Voltage

±8

T_J,T_STG

Junction and Storage Temperature Range

-55 to +150

°C

Thermal Resistance

Parameter

Max.

Units

R_θJA

Maximum Junction-to-Ambient

°C/W

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June 30, 2014

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