IRF7420PbF-1
HEXFET® Power MOSFET
A
1
2
3
4
8
VDS
-12
14
V
D
S
S
RDS(on) max
(@VGS = -4.5V)
RDS(on) max
(@VGS = -2.5V)
RDS(on) max
(@VGS = -1.8V)
Qg (typical)
7
D
m
Ω
6
S
G
D
17.5
m
Ω
5
D
26
38
m
Ω
SO-8
Top View
nC
A
ID
-11.5
(@TA = 25°C)
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
MSL1, Industrial qualification
Standard Pack
Form
Base Part Number
Package Type
Orderable Part Number
Quantity
Tube/Bulk
Tape and Reel
95
4000
IRF7420PbF-1
IRF7420TRPbF-1
IRF7420PbF-1
SO-8
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
-12
Units
V
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
-11.5
-9.2
-46
A
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
Power Dissipation
2.5
W
1.6
Linear Derating Factor
20
mW/°C
VGS
Gate-to-Source Voltage
±8
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
°C
Thermal Resistance
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
50
°C/W
1
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June 30, 2014