IRF7424

更新时间： 2024-09-27 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	230K
描述
Ultra Low On-Resistance

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数据手册
替代型号

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IRF7424 数据手册

PD- 94024A

IRF7424

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l P-Channel MOSFET

l Surface Mount

V_DSS

-30V

R_DS(on)max (mΩ)

13.5@V_GS= -10V

22@V_GS= -4.5V

I_D

-11A

-8.8A

l Available in Tape & Reel

Description

These P-Channel MOSFETs from International

Rectifier utilize advanced processing techniques to

achieve the extremely low on-resistance per silicon

area. This benefit provides the designer with an

extremely efficient device for use in battery and load

management applications..

SO-8

Top View

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

powerapplications. Withtheseimprovements,multiple

devicescanbeusedinanapplicationwithdramatically

reduced board space. The package is designed for

vapor phase, infrared, or wave soldering techniques.

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain- Source Voltage

-30

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-11

-9.3

-47

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

2.5

1.6

Linear Derating Factor

mW/°C

V_GS

Gate-to-Source Voltage

± 20

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

Units

°C/W

R_θJA

www.irf.com

3/29/01

12 3 4 5 6 7...9

中文翻译

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IRF7424 替代型号

型号	品牌	替代类型	描述	数据表
IRF7424PBF	INFINEON	类似代替	HEXFET Power MOSFET

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