5秒后页面跳转
IRF743-011PBF PDF预览

IRF743-011PBF

更新时间: 2023-02-26 12:56:53
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
1页 42K
描述
Power Field-Effect Transistor, 8.3A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IRF743-011PBF 数据手册

  

与IRF743-011PBF相关器件

型号 品牌 描述 获取价格 数据表
IRF743-012PBF INFINEON Power Field-Effect Transistor, 8.3A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Met

获取价格

IRF743-013 INFINEON Power Field-Effect Transistor, 8.3A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Met

获取价格

IRF743-013PBF INFINEON Power Field-Effect Transistor, 8.3A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Met

获取价格

IRF7433 INFINEON HEXFET Power MOSFET

获取价格

IRF7433PBF INFINEON HEXFET㈢ Power MOSFET

获取价格

IRF7433TR INFINEON Power Field-Effect Transistor, 8.9A I(D), 12V, 0.024ohm, 1-Element, P-Channel, Silicon, Me

获取价格