IRF7433PBF

更新时间： 2024-11-23 04:44:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	165K
描述
HEXFET㈢ Power MOSFET

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中文翻译

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数据手册

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IRF7433PBF 数据手册

PD - 95305

IRF7433PbF

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l P-Channel MOSFET

l Surface Mount

l Available in Tape & Reel

l Lead-Free

V_DSS

-12V

R_DS(on)max

I_D

24mΩ@V_GS= -4.5V

30mΩ@V_GS= -2.5V

46mΩ@V_GS= -1.8V

-8.7A

-7.4A

-6.3A

Description

These P-Channel MOSFETs from International

Rectifier utilize advanced processing techniques to

achieve the extremely low on-resistance per silicon

area. This benefit provides the designer with an

extremely efficient device for use in battery and load

management applications..

SO-8

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

powerapplications. Withtheseimprovements,multiple

devicescanbeusedinanapplicationwithdramatically

reduced board space. The package is designed for

vapor phase, infrared, or wave soldering techniques.

Top View

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Max.

-12

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-8.9

-7.1

-36

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation

Linear Derating Factor

2.5

1.6

0.02

W/°C

V_GS

Gate-to-Source Voltage

±8

T_J, T_STG

Junction and Storage Temperature Range

-55 to +150

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

Units

°C/W

R_θJA

www.irf.com

10/12/04

12 3 4 5 6 7...9

中文翻译

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