Datasheet > IRF7453TRPBF

IRF7453TRPBF

更新时间： 2024-11-14 19:42:27

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲光电二极管晶体管
页数	文件大小	规格书
8页	222K
描述
Small Signal Field-Effect Transistor, 2.2A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

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数据手册

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IRF7453TRPBF 数据手册

PD- 93899A

IRF7453

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

V_DSS

R_DS(on)max

I_D

250V

0.23Ω@V_GS= 10V 2.2A

Benefits

l Low Gate to Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

SO-8

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Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

2.2

1.7

P_D@T_A= 25°C

Power Dissipation

2.5

W/°C

Linear Derating Factor

0.02

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Symbol

R_θJL

Parameter

Junction-to-Drain Lead

Typ.

–––

Max.

Units

R_θJA

Junction-to-Ambient

–––

°C/W

Notes through are on page 8

www.irf.com

2/1/01

12 3 4 5 6 7 8

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