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IRF7459 PDF预览

IRF7459

更新时间: 2024-11-19 22:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
8页 113K
描述
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=12A)

IRF7459 数据手册

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PD- 93885B  
IRF7459  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
l High Frequency DC-DC Isolated  
Converters with Synchronous Rectification  
for Telecom and Industrial use  
VDSS  
20V  
RDS(on) max ID  
9.0mΩ  
12A  
l High Frequency Buck Converters for  
Computer Processor Power  
Benefits  
A
A
1
2
3
4
8
7
D
S
S
l Ultra-Low Gate Impedance  
l Very Low RDS(on) at 4.5V VGS  
l Fully Characterized Avalanche Voltage  
and Current  
D
6
5
S
D
D
G
SO-8  
Top View  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
VDS  
Drain-Source Voltage  
20  
± 12  
V
V
VGS  
Gate-to-Source Voltage  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
12  
10  
A
100  
PD @TA = 25°C  
PD @TA = 70°C  
Maximum Power Dissipationƒ  
Maximum Power Dissipationƒ  
Linear Derating Factor  
2.5  
W
W
1.6  
0.02  
W/°C  
°C  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
Thermal Resistance  
Symbol  
RθJL  
RθJA  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient †  
Typ.  
–––  
Max.  
20  
50  
Units  
–––  
°C/W  
Notes  through „are on page 8  
www.irf.com  
1
3/25/01  

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