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IRF7464PBF PDF预览

IRF7464PBF

更新时间: 2024-11-14 04:44:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管局域网
页数 文件大小 规格书
8页 125K
描述
HEXET Power MOSFET

IRF7464PBF 数据手册

 浏览型号IRF7464PBF的Datasheet PDF文件第2页浏览型号IRF7464PBF的Datasheet PDF文件第3页浏览型号IRF7464PBF的Datasheet PDF文件第4页浏览型号IRF7464PBF的Datasheet PDF文件第5页浏览型号IRF7464PBF的Datasheet PDF文件第6页浏览型号IRF7464PBF的Datasheet PDF文件第7页 
PD- 95273  
IRF7464PbF  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
l High frequency DC-DC converters  
l Lead-Free  
VDSS  
200V  
RDS(on) max  
ID  
1.2A  
0.73Ω  
Benefits  
l Low Gate to Drain Charge to Reduce  
Switching Losses  
A
A
D
1
2
3
4
8
7
S
S
S
G
l Fully Characterized Capacitance  
Including Effective COSS to Simplify  
Design, (See App. Note AN1001)  
l Fully Characterized Avalanche Voltage  
and Current  
D
6
5
D
D
SO-8  
Top View  
Absolute Maximum Ratings  
Parameter  
Max.  
1.2  
Units  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
1.0  
A
10  
PD @TA = 25°C  
Power Dissipation  
2.5  
W
W/°C  
V
Linear Derating Factor  
0.02  
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 30  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
6.8  
V/ns  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Typical SMPS Topologies  
l Telecom 48V input Forward Converter  
Notes  through †are on page 8  
www.irf.com  
1
9/21/04  

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