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IRF7470TRPBF PDF预览

IRF7470TRPBF

更新时间: 2024-11-20 12:36:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体转换器晶体管功率场效应晶体管开关脉冲光电二极管PC
页数 文件大小 规格书
8页 133K
描述
High Frequency DC-DC Converters with Synchronous Rectification

IRF7470TRPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.77Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:772250
Samacsys Pin Count:8Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:SO
Samacsys Released Date:2019-09-06 10:27:33Is Samacsys:N
雪崩能效等级(Eas):300 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (ID):10 A
最大漏源导通电阻:0.013 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MS-012AAJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):85 A表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF7470TRPBF 数据手册

 浏览型号IRF7470TRPBF的Datasheet PDF文件第2页浏览型号IRF7470TRPBF的Datasheet PDF文件第3页浏览型号IRF7470TRPBF的Datasheet PDF文件第4页浏览型号IRF7470TRPBF的Datasheet PDF文件第5页浏览型号IRF7470TRPBF的Datasheet PDF文件第6页浏览型号IRF7470TRPBF的Datasheet PDF文件第7页 
PD- 95276  
IRF7470PbF  
SMPS MOSFET  
Applications  
HEXFET® Power MOSFET  
l High Frequency DC-DC Converters  
with Synchronous Rectification  
l Lead-Free  
VDSS  
40V  
RDS(on) max  
ID  
10A  
13mΩ  
Benefits  
l Ultra-Low Gate Impedance  
l Very Low RDS(on) at 4.5V VGS  
A
A
D
1
2
3
4
8
7
S
S
S
G
D
l Fully Characterized Avalanche Voltage  
and Current  
6
5
D
D
SO-8  
Top View  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
VDS  
Drain-Source Voltage  
40  
V
VGS  
Gate-to-Source Voltage  
± 12  
V
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
10  
8.5  
85  
A
PD @TA = 25°C  
PD @TA = 70°C  
Maximum Power Dissipationƒ  
Maximum Power Dissipationƒ  
Linear Derating Factor  
2.5  
W
W
1.6  
0.02  
W/°C  
°C  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
Thermal Resistance  
Symbol  
RθJL  
Parameter  
Junction-to-Drain Lead  
Typ.  
–––  
Max.  
20  
Units  
RθJA  
Junction-to-Ambient „  
–––  
50  
°C/W  
Notes  through „are on page 8  
www.irf.com  
1
8/11/04  

IRF7470TRPBF 替代型号

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