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IRF7477PBF PDF预览

IRF7477PBF

更新时间: 2024-11-20 04:44:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体小信号场效应晶体管
页数 文件大小 规格书
8页 126K
描述
HEXFET Power MOSFET

IRF7477PBF 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.84Is Samacsys:N
Base Number Matches:1

IRF7477PBF 数据手册

 浏览型号IRF7477PBF的Datasheet PDF文件第2页浏览型号IRF7477PBF的Datasheet PDF文件第3页浏览型号IRF7477PBF的Datasheet PDF文件第4页浏览型号IRF7477PBF的Datasheet PDF文件第5页浏览型号IRF7477PBF的Datasheet PDF文件第6页浏览型号IRF7477PBF的Datasheet PDF文件第7页 
PD- 95334  
IRF7477PbF  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
l High Frequency Synchronous Buck  
Converters for Computers and  
Communications  
VDSS  
30V  
RDS(on) max (mW)  
8.5@VGS = 10V  
ID  
14A  
10@VGS = 4.5V  
11A  
l Lead-Free  
A
A
D
1
2
3
4
8
S
S
S
G
Benefits  
l Ultra-Low Gate Impedance  
l Very Low RDS(on)  
l Fully Characterized Avalanche Voltage  
and Current  
7
D
6
D
5
D
SO-8  
Top View  
l Low Charge Ratio to Eliminate False Turn  
On in High Frequency Circuits  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
VDS  
Drain-Source Voltage  
30  
V
VGS  
Gate-to-Source Voltage  
± 20  
V
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
14  
11  
A
110  
PD @TA = 25°C  
PD @TA = 70°C  
Maximum Power Dissipation„  
Maximum Power Dissipation„  
Linear Derating Factor  
2.5  
W
W
1.6  
0.02  
mW/°C  
°C  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
Thermal Resistance  
Symbol  
RθJL  
Parameter  
Junction-to-Drain Lead  
Typ.  
–––  
Max.  
20  
Units  
RθJA  
Junction-to-Ambient „  
–––  
50  
°C/W  
Notes  through „ are on page 8  
www.irf.com  
1
09/21/04  

IRF7477PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF8707PBF INFINEON

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