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IRF7478PBF PDF预览

IRF7478PBF

更新时间: 2024-11-15 04:44:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体开关晶体管功率场效应晶体管PC
页数 文件大小 规格书
8页 128K
描述
SMPS MOSFET

IRF7478PBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, SO-8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:8.41
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:934363Samacsys Pin Count:8
Samacsys Part Category:SwitchSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:SO-8Samacsys Released Date:2017-10-09 09:26:56
Is Samacsys:NBase Number Matches:1

IRF7478PBF 数据手册

 浏览型号IRF7478PBF的Datasheet PDF文件第2页浏览型号IRF7478PBF的Datasheet PDF文件第3页浏览型号IRF7478PBF的Datasheet PDF文件第4页浏览型号IRF7478PBF的Datasheet PDF文件第5页浏览型号IRF7478PBF的Datasheet PDF文件第6页浏览型号IRF7478PBF的Datasheet PDF文件第7页 
PD- 95280  
IRF7478PbF  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
l High frequency DC-DC converters  
l Lead-Free  
VDSS  
60V  
RDS(on) max (mW)  
26@VGS = 10V  
ID  
4.2A  
30@VGS = 4.5V  
3.5A  
Benefits  
A
A
1
2
3
4
8
S
S
S
G
D
l Low Gate to Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
7
D
6
D
5
D
l Fully Characterized Avalanche Voltage  
and Current  
SO-8  
Top View  
Absolute Maximum Ratings  
Parameter  
Max.  
7.0  
Units  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
5.6  
A
56  
PD @TA = 25°C  
Power Dissipation„  
2.5  
W
W/°C  
V
Linear Derating Factor  
0.02  
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 20  
Peak Diode Recovery dv/dt †  
Operating Junction and  
3.7  
V/ns  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Symbol  
RθJL  
RθJA  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient „  
Typ.  
–––  
Max.  
20  
50  
Units  
–––  
°C/W  
Notes  through †are on page 8  
www.irf.com  
1
09/21/04  

IRF7478PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF7478TRPBF INFINEON

类似代替

Power Field-Effect Transistor, 7A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Meta
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