Datasheet > IRF7478QTRPBF

IRF7478QTRPBF

更新时间： 2024-11-20 20:42:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	210K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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IRF7478QTRPBF 数据手册

PD-96128

SMPS MOSFET

IRF7478QPbF

HEXFET^®Power MOSFET

Advanced Process Technology

UltraLowOn-Resistance

NChannelMOSFET

V_DSS

60V

R_DS(on)max (mW)

26@V_GS= 10V

I_D

4.2A

SurfaceMount

30@V_GS= 4.5V

3.5A

Available in Tape & Reel

150°COperatingTemperature

Automotive [Q101] Qualified

Lead-Free

Description

SpecificallydesignedforAutomotiveapplications.Additional

features of these Automotive qualified HEXFET Power

MOSFET's are a 150°C junction operating temperature,

fast switching speed and improved repetitive avalanche

rating. These benefits combine to make this design an

extremelyefficientandreliabledeviceforuseinAutomotive

applications and a wide variety of other applications.

The efficient SO-8 package provides enhanced thermal

characteristics making it ideal in a variety of power

applications. This surface mount SO-8 can dramatically

reduce board space and is also available in Tape & Reel.

SO-8

Top View

Absolute Maximum Ratings

Parameter

Max.

7.0

5.6

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_A= 25°C

Power Dissipation

2.5

W/°C

Linear Derating Factor

0.02

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 20

Peak Diode Recovery dv/dt

Operating Junction and

3.7

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Symbol

R_θJL

Parameter

Junction-to-Drain Lead

Typ.

–––

Max.

Units

R_θJA

Junction-to-Ambient

–––

°C/W

Notes through are on page 8

www.irf.com

09/04/07

12 3 4 5 6 7 8

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IRF7478QTRPBF 替代型号

型号	品牌	替代类型	描述	数据表
AUIRF7478QTR	INFINEON	完全替代	AUTOMOTIVE GRADE

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