IRF7474

更新时间： 2024-11-14 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
8页	225K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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IRF7474 数据手册

PD- 94097

IRF7474

HEXFET^®Power MOSFET

Applications

V_DSS

100V

R_DS(on)max

I_D

l Telecom and Data-Com 24 and 48V

input DC-DC converters

l Motor Control

63mΩ@V_GS= 10V 4.5A

l Uninterruptible Power Supply

Benefits

l Low On-Resistance

l High Speed Switching

l Low Gate Drive Current Due to Improved

Gate Charge Characteristic

l Improved Avalanche Ruggedness and

Dynamic dv/dt

l Fully Characterized Avalanche Voltage

and Current

SO-8

Top V iew

Absolute Maximum Ratings

Parameter

Max.

4.5

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

3.6

P_D@T_A= 25°C

Power Dissipation

2.5

W/°C

Linear Derating Factor

0.02

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 20

Peak Diode Recovery dv/dt

Operating Junction and

5.5

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Symbol

R_θJL

Parameter

Junction-to-Drain Lead

Typ.

–––

Max.

Units

R_θJA

Junction-to-Ambient

–––

°C/W

Notes through are on page 8

www.irf.com

9/3/01

12 3 4 5 6 7 8

中文翻译

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与IRF7474相关器件

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IRF7476TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:12V;持续漏极电流（Id）（在25°C时
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