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IRF7480MTRPBF PDF预览

IRF7480MTRPBF

更新时间: 2024-11-20 21:07:27
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
12页 489K
描述
Power Field-Effect Transistor, 217A I(D), 40V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

IRF7480MTRPBF 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:15 weeks风险等级:1.1
Samacsys Description:Infineon IRF7480MTRPBF N-channel MOSFET, 330 A, 40 V DirectFET, 6+Tab-Pin ME雪崩能效等级(Eas):206 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (ID):217 A
最大漏源导通电阻:0.0012 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-XBCC-N6湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):868 A表面贴装:YES
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF7480MTRPBF 数据手册

 浏览型号IRF7480MTRPBF的Datasheet PDF文件第2页浏览型号IRF7480MTRPBF的Datasheet PDF文件第3页浏览型号IRF7480MTRPBF的Datasheet PDF文件第4页浏览型号IRF7480MTRPBF的Datasheet PDF文件第5页浏览型号IRF7480MTRPBF的Datasheet PDF文件第6页浏览型号IRF7480MTRPBF的Datasheet PDF文件第7页 
StrongIRFET™  
IRF7480MTRPbF  
DirectFET® N-Channel Power MOSFET  
Application  
Brushed Motor drive applications  
BLDC Motor drive applications  
Battery powered circuits  
Half-bridge and full-bridge topologies  
Synchronous rectifier applications  
Resonant mode power supplies  
OR-ing and redundant power switches  
DC/DC and AC/DC converters  
DC/AC Inverters  
VDSS  
RDS(on) typ.  
max  
40V  
0.95m  
1.20m  
217A  
ID (Silicon Limited)  
ID (double-sided cooling)  
330A  
S
S
S
S
S
Benefits  
D
D
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness  
Fully Characterized Capacitance and Avalanche SOA  
Enhanced body diode dv/dt and di/dt Capability  
Lead-Free, RoHS Compliant  
G
ME  
Standard Pack  
Form  
Base part number  
Package Type  
Orderable Part Number  
Quantity  
IRF7480MPbF  
DirectFET® ME  
Tape and Reel  
4800  
IRF7480MTRPbF  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
225  
200  
175  
150  
125  
100  
75  
I
= 132A  
D
T
= 125°C  
J
50  
25  
T
= 25°C  
J
0
4
6
8
10 12 14 16 18 20  
25  
50  
75  
100  
125  
150  
T
, Case Temperature (°C)  
C
V
Gate -to -Source Voltage (V)  
GS,  
Fig 2. Maximum Drain Current vs. Case Temperature  
Fig 1. Typical On-Resistance vs. Gate Voltage  
1
2016-5-4  

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