IRF7484PBF

更新时间： 2024-11-20 04:44:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲光电二极管局域网
页数	文件大小	规格书
10页	172K
描述
HEXFET㈢ Power MOSFET

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中文翻译

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数据手册

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IRF7484PBF 数据手册

PD - 95281

IRF7484PbF

Typical Applications

HEXFET^®Power MOSFET

Relayreplacement

Anti-lock Braking System

Air Bag

V_DSSR_DS(on)max (mW) I_D

Lead-Free

40V

10@V_GS= 7.0V

14A

Benefits

Advanced Process Technology

UltraLowOn-Resistance

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Description

Specifically designed for Automotive applications, this

Stripe Planar design of HEXFET^®Power MOSFETs

utilizes the latest processing techniques to achieve

extremelylow on-resistanceper siliconarea. Additional

features of this HEXFET power MOSFET are a 150°C

junction operating temperature, fast switching speed

andimprovedrepetitiveavalancherating. Thesebenefits

combine to make this design an extremely efficient and

reliable device for use in Automotive applications and a

wide variety of other applications.

SO-8

Top View

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

110

P_D@T_A= 25°C

Power Dissipation

Linear Derating Factor

2.5

W/°C

0.02

V_GS

Gate-to-Source Voltage

± 8.0

230

E_AS

Single Pulse Avalanche Energy

Avalanche Current

I_AR

See Fig.16c, 16d, 19, 20

E_AR

Repetitive Avalanche Energy

Junction and Storage Temperature Range

°C

T_J,T_STG

-55 to + 150

Thermal Resistance

Symbol

R_θJL

Parameter

Junction-to-Drain Lead

Typ.

–––

Max.

Units

R_θJA

Junction-to-Ambient

–––

°C/W

www.irf.com

09/21/04

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中文翻译

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