Datasheet > IRF7476TR

IRF7476TR

更新时间： 2024-11-16 17:15:55

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	369K
描述
种类:N-Channel;漏源电压（Vdss）:12V;持续漏极电流（Id）（在25°C时）:15A;漏源导通电阻:mΩ@10V;漏源导通电阻:8mΩ@4.5V;Vgs(th)(V):±12

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IRF7476TR 数据手册

UMW

IRF7476

Benefits

VDS (V) = 12V

RDS(ON)

(VGS

4.5V)

2.8V)

30m

Applications

High Frequency 3.3V and 5V input Point-

of-Load Synchronous Buck Converters for

Netcom and Computing Applications.

Power Management for Netcom,

Computing and Portable Applications.

Lead-Free

SOP-8

Absolute Maximum Ratings

Symbol

V_DS

Parameter

Drain-Source Voltage

Max.

Units

V_GS

Gate-to-Source Voltage

±12

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

120

2.5

P_D@T_A= 25°C

P_D@T_A= 70°C

1.6

0.02

W/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance

Symbol

R_θJL

Parameter

Junction-to-Drain Lead

Typ.

Max.

Units

R_θJA

Junction-to-Ambient

°C/W

Notes:

Repetitive rating; pulse width limited by

max. junction temperature.

Starting T_J= 25°C, L = 2.3mH

R_G= 25Ω, I_AS= 12A.

Pulse width ≤ 400µs; duty cycle

When mounted on 1 inch square copper board.

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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