IRF7478

更新时间： 2024-09-12 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	210K
描述
Power MOSFET(Vdss=60V)

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中文翻译

获取价格

数据手册
替代型号

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IRF7478 数据手册

PD- 94055A

IRF7478

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

V_DSS

60V

R_DS(on)max (mΩ)

26@V_GS= 10V

I_D

4.2A

30@V_GS= 4.5V

3.5A

Benefits

l Low Gate to Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

SO-8

Top V iew

Absolute Maximum Ratings

Parameter

Max.

7.0

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

5.6

P_D@T_A= 25°C

Power Dissipation

2.5

W/°C

Linear Derating Factor

0.02

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 20

Peak Diode Recovery dv/dt

Operating Junction and

3.7

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Symbol

R_θJL

R_θJA

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

–––

°C/W

Notes through are on page 8

www.irf.com

3/13/01

12 3 4 5 6 7 8

中文翻译

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IRF7478 替代型号

型号	品牌	替代类型	描述	数据表
IRF7478TR	INFINEON	类似代替	Power Field-Effect Transistor, 7A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Meta
IRF7478TRPBF	INFINEON	类似代替	Power Field-Effect Transistor, 7A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Meta
IRF7478PBF	INFINEON	类似代替	SMPS MOSFET

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