5秒后页面跳转
IRF7478TRPBF PDF预览

IRF7478TRPBF

更新时间: 2024-10-30 19:51:15
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 124K
描述
Power Field-Effect Transistor, 7A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

IRF7478TRPBF 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:5.5雪崩能效等级(Eas):140 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):7 A最大漏源导通电阻:0.026 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MS-012AA
JESD-30 代码:R-PDSO-G8湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):56 A表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF7478TRPBF 数据手册

 浏览型号IRF7478TRPBF的Datasheet PDF文件第2页浏览型号IRF7478TRPBF的Datasheet PDF文件第3页浏览型号IRF7478TRPBF的Datasheet PDF文件第4页浏览型号IRF7478TRPBF的Datasheet PDF文件第5页浏览型号IRF7478TRPBF的Datasheet PDF文件第6页浏览型号IRF7478TRPBF的Datasheet PDF文件第7页 
PD- 95280  
IRF7478PbF  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
l High frequency DC-DC converters  
l Lead-Free  
VDSS  
60V  
RDS(on) max (mW)  
26@VGS = 10V  
ID  
4.2A  
30@VGS = 4.5V  
3.5A  
Benefits  
A
A
1
2
3
4
8
S
S
S
G
D
l Low Gate to Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
7
D
6
D
5
D
l Fully Characterized Avalanche Voltage  
and Current  
SO-8  
Top View  
Absolute Maximum Ratings  
Parameter  
Max.  
7.0  
Units  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
5.6  
A
56  
PD @TA = 25°C  
Power Dissipation„  
2.5  
W
W/°C  
V
Linear Derating Factor  
0.02  
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 20  
Peak Diode Recovery dv/dt †  
Operating Junction and  
3.7  
V/ns  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Symbol  
RθJL  
RθJA  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient „  
Typ.  
–––  
Max.  
20  
50  
Units  
–––  
°C/W  
Notes  through †are on page 8  
www.irf.com  
1
09/21/04  

IRF7478TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF7478PBF INFINEON

类似代替

SMPS MOSFET
IRF7478 INFINEON

类似代替

Power MOSFET(Vdss=60V)

与IRF7478TRPBF相关器件

型号 品牌 获取价格 描述 数据表
IRF7480M INFINEON

获取价格

Brushed Motor drive applications
IRF7480M_15 INFINEON

获取价格

Brushed Motor drive applications
IRF7480MTR1PBF INFINEON

获取价格

Power Field-Effect Transistor
IRF7480MTRPBF INFINEON

获取价格

Power Field-Effect Transistor, 217A I(D), 40V, 0.0012ohm, 1-Element, N-Channel, Silicon, M
IRF7483MPBF INFINEON

获取价格

Brushed Motor drive applications
IRF7483MPBF_15 INFINEON

获取价格

Brushed Motor drive applications
IRF7483MTRPBF INFINEON

获取价格

Power Field-Effect Transistor,
IRF7484 INFINEON

获取价格

HEXFET Power MOSFET
IRF7484PBF INFINEON

获取价格

HEXFET㈢ Power MOSFET
IRF7484Q INFINEON

获取价格

AUTOMOTIVE MOSFET