IRF7476

更新时间： 2024-11-14 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	112K
描述
Power MOSFET(Vdss=12V, Id=15A)

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中文翻译

获取价格

数据手册
替代型号

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IRF7476 数据手册

PD - 94311

IRF7476

HEXFET^®Power MOSFET

Applications

V_DSS

12V

R_DS(on)max

I_D

l High Frequency 3.3V and 5V input Point-

of-Load Synchronous Buck Converters for

Netcom and Computing Applications.

lPower Management for Netcom,

Computing and Portable Applications.

8.0mΩ@V_GS= 4.5V 15A

Benefits

l Ultra-Low Gate Impedance

l Very Low R_DS(on)

l Fully Characterized Avalanche Voltage

and Current

SO-8

Top View

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

Drain-Source Voltage

V_GS

Gate-to-Source Voltage

±12

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

120

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation

Linear Derating Factor

2.5

1.6

0.02

W/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance

Symbol

R_θJL

Parameter

Junction-to-Drain Lead

Typ.

–––

Max.

Units

R_θJA

Junction-to-Ambient

–––

°C/W

Notes through are on page 8

www.irf.com

04/29/02

12 3 4 5 6 7 8

中文翻译

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IRF7476 替代型号

型号	品牌	替代类型	描述	数据表
IRF7476TRPBF	INFINEON	功能相似	Small Signal Field-Effect Transistor, 15A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-

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