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IRF7470PBF PDF预览

IRF7470PBF

更新时间: 2024-11-20 04:44:35
品牌 Logo 应用领域
英飞凌 - INFINEON PC
页数 文件大小 规格书
8页 129K
描述
HEXFET Power MOSFET

IRF7470PBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, SO-8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.13
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:934361Samacsys Pin Count:8
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:IRF7470PBF-1Samacsys Released Date:2019-01-08 15:45:59
Is Samacsys:NBase Number Matches:1

IRF7470PBF 数据手册

 浏览型号IRF7470PBF的Datasheet PDF文件第2页浏览型号IRF7470PBF的Datasheet PDF文件第3页浏览型号IRF7470PBF的Datasheet PDF文件第4页浏览型号IRF7470PBF的Datasheet PDF文件第5页浏览型号IRF7470PBF的Datasheet PDF文件第6页浏览型号IRF7470PBF的Datasheet PDF文件第7页 
PD- 95276  
IRF7470PbF  
SMPS MOSFET  
Applications  
HEXFET® Power MOSFET  
l High Frequency DC-DC Converters  
with Synchronous Rectification  
l Lead-Free  
VDSS  
40V  
RDS(on) max  
ID  
10A  
13mΩ  
Benefits  
l Ultra-Low Gate Impedance  
l Very Low RDS(on) at 4.5V VGS  
A
A
D
1
2
3
4
8
7
S
S
S
G
D
l Fully Characterized Avalanche Voltage  
and Current  
6
5
D
D
SO-8  
Top View  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
VDS  
Drain-Source Voltage  
40  
V
VGS  
Gate-to-Source Voltage  
± 12  
V
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
10  
8.5  
85  
A
PD @TA = 25°C  
PD @TA = 70°C  
Maximum Power Dissipationƒ  
Maximum Power Dissipationƒ  
Linear Derating Factor  
2.5  
W
W
1.6  
0.02  
W/°C  
°C  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
Thermal Resistance  
Symbol  
RθJL  
Parameter  
Junction-to-Drain Lead  
Typ.  
–––  
Max.  
20  
Units  
RθJA  
Junction-to-Ambient „  
–––  
50  
°C/W  
Notes  through „are on page 8  
www.irf.com  
1
8/11/04  

IRF7470PBF 替代型号

型号 品牌 替代类型 描述 数据表
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