Datasheet > IRF7471PBF

IRF7471PBF

更新时间： 2024-11-20 04:44:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	124K
描述
HEXFET㈢Power MOSFET

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中文翻译

获取价格

数据手册

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IRF7471PBF 数据手册

PD- 95726

SMPS MOSFET

IRF7471PbF

Applications

l High Frequency Isolated DC-DC

HEXFET^®Power MOSFET

Converters with Synchronous Rectification

for Telecom and Industrial Use

l High Frequency Buck Converters for

Computer Processor Power

V_DSS

40V

R_DS(on)max

I_D

13mΩ

10A

l Lead-Free

Benefits

l Ultra-Low Gate Impedance

l Very Low R_DS(on)

l Fully Characterized Avalanche Voltage

and Current

SO-8

Top View

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

Drain-Source Voltage

V_GS

Gate-to-Source Voltage

± 20

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

8.3

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation

Linear Derating Factor

2.5

1.6

0.02

mW/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance

Symbol

R_θJL

Parameter

Junction-to-Drain Lead

Typ.

–––

Max.

Units

R_θJA

Junction-to-Ambient

–––

°C/W

Notes through are on page 8

www.irf.com

8/11/04

12 3 4 5 6 7 8

中文翻译

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