Datasheet > IRF7473PBF-1

IRF7473PBF-1

更新时间： 2024-11-20 21:17:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	193K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IRF7473PBF-1 技术参数

是否Rohs认证：	符合	生命周期：	Not Recommended
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.66	湿度敏感等级：	1
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

IRF7473PBF-1 数据手册

IRF7473PbF-1

HEXFET^®Power MOSFET

V_DS

100

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

I_D

6.9

(@T_A= 25°C)

SO-8

Top View

Features

Industry-standard pinout SO-8 Package

Benefits

Multi-Vendor Compatibility

⇒

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1, Industrial qualification

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Standard Pack

Form

Base Part Number

Package Type

Orderable Part Number

Quantity

Tube/Bulk

Tape and Reel

4000

IRF7473PbF-1

IRF7473TRPbF-1

IRF7473PbF-1

SO-8

Absolute Maximum Ratings

Parameter

Continuous Drain Current, V_GS@ 10V

Max.

6.9

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

5.5

P_D@T_A= 25°C

Power Dissipation

2.5

W/°C

Linear Derating Factor

0.02

± 20

5.8

V_GS

dv/dt

T_J

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Symbol

R_θJL

Parameter

Junction-to-Drain Lead

Typ.

–––

Max.

Units

R_θJA

Junction-to-Ambient

–––

°C/W

Notes through are on page 8

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June 23, 2014

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