IRF7470

更新时间： 2024-11-19 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲光电二极管局域网
页数	文件大小	规格书
8页	119K
描述
Power MOSFET(Vdss=40V, Rds(on)max=13mohm, Id=10A)

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中文翻译

获取价格

数据手册
替代型号

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IRF7470 数据手册

PD- 93913C

IRF7470

SMPS MOSFET

Applications

HEXFET^®Power MOSFET

l High Frequency DC-DC Converters

V_DSS

R_DS(on)max

I_D

with Synchronous Rectification

40V

13mΩ

10A

Benefits

l Ultra-Low Gate Impedance

l Very Low R_DS(on)at 4.5V V_GS

l Fully Characterized Avalanche Voltage

and Current

SO-8

Top View

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

Drain-Source Voltage

V_GS

Gate-to-Source Voltage

± 12

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

8.5

2.5

P_D@T_A= 25°C

P_D@T_A= 70°C

1.6

0.02

mW/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance

Symbol

R_θJL

Parameter

Junction-to-Drain Lead

Typ.

–––

Max.

Units

R_θJA

Junction-to-Ambient

–––

°C/W

Notes through are on page 8

www.irf.com

3/25/01

12 3 4 5 6 7 8

中文翻译

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IRF7470 替代型号

型号	品牌	替代类型	描述	数据表
IRF7469TRPBF	INFINEON	类似代替	Power Field-Effect Transistor, 9A I(D), 40V, 0.017ohm, 1-Element, N-Channel, Silicon, Meta
IRF7470TRPBF	INFINEON	类似代替	High Frequency DC-DC Converters with Synchronous Rectification
IRF7469	INFINEON	类似代替	Power MOSFET(Vdss=40V, Id=9.0A)

与IRF7470相关器件

型号	品牌	获取价格	描述	数据表
IRF7470PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF7470TR	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Met
IRF7470TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:40V;持续漏极电流（Id）（在25°C时
IRF7470TRPBF	INFINEON	获取价格	High Frequency DC-DC Converters with Synchronous Rectification
IRF7471	INFINEON	获取价格	Power MOSFET(Vdss=40V, Rds(on)max=13mohm, Id=10A)
IRF7471PBF	INFINEON	获取价格	HEXFET㈢Power MOSFET
IRF7473	INFINEON	获取价格	Power MOSFET(Vdss=100V, iD=6.9A)
IRF7473PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF7473PBF-1	INFINEON	获取价格	Power Field-Effect Transistor,
IRF7473TR	INFINEON	获取价格	Power Field-Effect Transistor, 6.9A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, M