Datasheet > IRF7467

IRF7467

更新时间： 2024-11-19 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	115K
描述
Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=11A)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF7467 数据手册

PD - 93883B

IRF7467

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

l High Frequency DC-DC Isolated

Converters with Synchronous Rectification

for Telecom and Industrial use

V_DSS

30V

R_DS(on)max I_D

12mΩ

11A

l High Frequency Buck Converters for

Computer Processor Power

Benefits

l Ultra-Low Gate Impedance

l Very Low R_DS(on)at 4.5V V_GS

l Fully Characterized Avalanche Voltage

and Current

SO-8

Top View

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

Drain-Source Voltage

V_GS

Gate-to-Source Voltage

± 12

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

9.0

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation

Linear Derating Factor

2.5

1.6

0.02

W/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance

Symbol

R_θJL

R_θJA

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

–––

°C/W

Notes through are on page 8

www.irf.com

3/25/01

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRF7467相关器件

型号	品牌	获取价格	描述	数据表
IRF7467PBF	INFINEON	获取价格	SMPS MOSFET
IRF7468	INFINEON	获取价格	Power MOSFET(Vdss=40V, Id=9.4A)
IRF7468PBF	INFINEON	获取价格	SMPS MOSFET
IRF7468TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.4A I(D), 40V, 0.0155ohm, 1-Element, N-Channel, Silicon, M
IRF7469	INFINEON	获取价格	Power MOSFET(Vdss=40V, Id=9.0A)
IRF7469PBF	INFINEON	获取价格	SMPS MOSFET
IRF7469PBF-1	INFINEON	获取价格	Power Field-Effect Transistor,
IRF7469TR	INFINEON	获取价格	Power Field-Effect Transistor, 9A I(D), 40V, 0.017ohm, 1-Element, N-Channel, Silicon, Meta
IRF7469TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:40V;持续漏极电流（Id）（在25°C时
IRF7469TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 9A I(D), 40V, 0.017ohm, 1-Element, N-Channel, Silicon, Meta