Datasheet > IRF7469TR

IRF7469TR

更新时间： 2024-10-15 17:15:31

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	308K
描述
种类:N-Channel;漏源电压（Vdss）:40V;持续漏极电流（Id）（在25°C时）:9A;Vgs(th)(V):±20;漏源导通电阻:17mΩ@10V;漏源导通电阻:21mΩ@4.5V

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中文翻译

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数据手册

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IRF7469TR 数据手册

UMW

IRF7469

Dual

N Channel MOSFET

Features

VDS (V)=40V

17m (VGS = 10V)

21m (VGS = 4.5V)

RDS(ON)

Applications

High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

Top View

High Frequency Buck Converters for

Computer Processor Power

Lead-Free

Benefits

Ultra-Low Gate Impedance

Very Low R_DS(on)

Fully Characterized Avalanche Voltage

and Current

Absolute Maximum Ratings

Symbol

V_DS

Parameter

Drain-Source Voltage

Max.

Units

V_GS

Gate-to-Source Voltage

± 20

I_D@ T_A= 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

9.0

_D@ T_A= 70°C

7.3

I_DM

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation

Linear Derating Factor

2.5

1.6

0.02

mW/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance

Symbol

R_θJL

Parameter

Junction-to-Drain Lead

Typ.

Max.

Units

R_θJA

Junction-to-Ambient

°C/W

Notes:

Repetitive rating; pulse width limited by

max. junction temperature.

Starting T_J= 25°C, L = 8.1mH

R_G= 25Ω, I_AS= 7.2A.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

When mounted on 1 inch square copper board.

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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