IRF7466

更新时间： 2024-11-19 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	233K
描述
Power MOSFET(Vdss=30V, Id=11A)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF7466 数据手册

PD- 93884C

IRF7466

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

l High Frequency Isolated DC-DC

V_DSS

30V

R_DS(on)max(mΩ)

I_D

12.5@V_GS= 10V

11A

Converters with Synchronous Rectification

for Telecom and Industrial Use

l High Frequency Buck Converters for

Computer Processor Power

Benefits

l Ultra-Low Gate Impedance

l Very Low R_DS(on)

l Fully Characterized Avalanche Voltage

and Current

SO-8

Top View

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

Drain-Source Voltage

V_GS

Gate-to-Source Voltage

± 20

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

9.0

2.5

P_D@T_A= 25°C

P_D@T_A= 70°C

1.6

0.02

mW/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance

Symbol

R_θJL

Parameter

Junction-to-Drain Lead

Typ.

–––

Max.

Units

R_θJA

Junction-to-Ambient

–––

°C/W

Notes through are on page 8

www.irf.com

3/25/01

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRF7466相关器件

型号	品牌	获取价格	描述	数据表
IRF7466PBF	INFINEON	获取价格	SMPS MOSFET
IRF7466TR	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Me
IRF7467	INFINEON	获取价格	Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=11A)
IRF7467PBF	INFINEON	获取价格	SMPS MOSFET
IRF7468	INFINEON	获取价格	Power MOSFET(Vdss=40V, Id=9.4A)
IRF7468PBF	INFINEON	获取价格	SMPS MOSFET
IRF7468TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.4A I(D), 40V, 0.0155ohm, 1-Element, N-Channel, Silicon, M
IRF7469	INFINEON	获取价格	Power MOSFET(Vdss=40V, Id=9.0A)
IRF7469PBF	INFINEON	获取价格	SMPS MOSFET
IRF7469PBF-1	INFINEON	获取价格	Power Field-Effect Transistor,