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IRF7459UTRPBF

更新时间： 2024-11-14 13:01:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
8页	113K
描述
Power Field-Effect Transistor, 12A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8

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数据手册

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IRF7459UTRPBF 数据手册

PD- 93885B

IRF7459

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

l High Frequency DC-DC Isolated

Converters with Synchronous Rectification

for Telecom and Industrial use

V_DSS

20V

R_DS(on)max I_D

9.0mΩ

12A

l High Frequency Buck Converters for

Computer Processor Power

Benefits

l Ultra-Low Gate Impedance

l Very Low R_DS(on)at 4.5V V_GS

l Fully Characterized Avalanche Voltage

and Current

SO-8

Top View

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

Drain-Source Voltage

± 12

V_GS

Gate-to-Source Voltage

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

100

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation

Linear Derating Factor

2.5

1.6

0.02

W/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance

Symbol

R_θJL

R_θJA

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

–––

°C/W

Notes through are on page 8

www.irf.com

3/25/01

12 3 4 5 6 7 8

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