IRF7464

更新时间： 2024-11-13 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	172K
描述
Power MOSFET(Vdss=200V, Rds(on)max=0.73ohm, Id=1.2A)

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中文翻译

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数据手册

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IRF7464 数据手册

PD- 93895

IRF7464

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

V_DSS

200V

R_DS(on)max

I_D

1.2A

0.73Ω

Benefits

l Low Gate to Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

SO-8

Top View

Absolute Maximum Ratings

Parameter

Max.

1.2

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

1.0

P_D@T_A= 25°C

Power Dissipation

2.5

W/°C

Linear Derating Factor

0.02

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

6.8

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Typical SMPS Topologies

l Telecom 48V input Forward Converter

Notes through are on page 8

www.irf.com

4/25/00

12 3 4 5 6 7 8

中文翻译

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