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IRF7460PBF PDF预览

IRF7460PBF

更新时间: 2024-10-30 03:58:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 180K
描述
HEXFET Power MOSFET

IRF7460PBF 数据手册

 浏览型号IRF7460PBF的Datasheet PDF文件第2页浏览型号IRF7460PBF的Datasheet PDF文件第3页浏览型号IRF7460PBF的Datasheet PDF文件第4页浏览型号IRF7460PBF的Datasheet PDF文件第5页浏览型号IRF7460PBF的Datasheet PDF文件第6页浏览型号IRF7460PBF的Datasheet PDF文件第7页 
PD - 95308  
IRF7460PbF  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
l High Frequency Isolated DC-DC  
VDSS  
RDS(on) max(mW)  
ID  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
l High Frequency Buck Converters for  
Computer Processor Power  
20V  
10@VGS = 10V  
12A  
l Lead-Free  
A
A
D
1
2
3
4
8
S
S
S
G
Benefits  
7
D
l Ultra-Low Gate Impedance  
l Very Low RDS(on)  
l Fully Characterized Avalanche Voltage  
and Current  
6
D
5
D
SO-8  
Top View  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
VDS  
Drain-Source Voltage  
20  
V
VGS  
Gate-to-Source Voltage  
± 20  
V
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
12  
10  
A
100  
PD @TA = 25°C  
PD @TA = 70°C  
Maximum Power Dissipationƒ  
Maximum Power Dissipationƒ  
Linear Derating Factor  
2.5  
W
W
1.6  
0.02  
mW/°C  
°C  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
Thermal Resistance  
Symbol  
RθJL  
Parameter  
Junction-to-Drain Lead  
Typ.  
–––  
Max.  
20  
Units  
RθJA  
Junction-to-Ambient ꢀ  
–––  
50  
°C/W  
Notes  through are on page 8  
www.irf.com  
1
10/12/04  

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