Datasheet > IRF7456TR

IRF7456TR

更新时间： 2024-10-15 17:15:43

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	546K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:16A;Vgs(th)(V):±12;漏源导通电阻:6.5mΩ@10V;漏源导通电阻:7.5mΩ@4.5V

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中文翻译

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数据手册

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IRF7456TR 数据手册

IRF7456

UMW

30V N-Channel MOSFET

Applications

High Frequency DC-DC Converters

with Synchronous Rectification

Lead-Free

Benefits

Ultra-Low R_DS(on)at 4.5V V_GS

Low Charge and Low Gate Impedance to

Reduce Switching Losses

Top View

Fully Characterized Avalanche Voltage

and Current

Features

VDS (V) =30V

ID= 16 A

(V = 10V)

RDS(ON) ＜

RDS(ON)

6.5m

Ω(V

=10V)

＜

7.5 m

Ω(V

=4.5V)

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

Drain-Source Voltage

V_GS

Gate-to-Source Voltage

± 12

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

130

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation

Linear Derating Factor

2.5

1.6

0.02

W/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

Units

°C/W

R_θJA

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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