Datasheet > IRF7457TRPBF-1

IRF7457TRPBF-1

更新时间： 2024-11-15 10:52:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	195K
描述
Power Field-Effect Transistor

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中文翻译

获取价格

技术参数
数据手册

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IRF7457TRPBF-1 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.83	湿度敏感等级：	1
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED

IRF7457TRPBF-1 数据手册

IRF7457PbF-1

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= 10V)

R_{DS(on) max}

(@V_GS= 4.5V)

Q_{g (typical)}

I_D

7.0

10.5

SO-8

(@T_A= 25°C)

Top View

Features

Industry-standard pinout SO-8 Package

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

Benefits

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

MSL1, Industrial qualification

Standard Pack

Form

Base Part Number

Package Type

Orderable Part Number

Quantity

Tube/Bulk

Tape and Reel

4000

IRF7457PbF-1

IRF7457TRPbF-1

IRF7457PbF-1

SO-8

Absolute Maximum Ratings

Symbol

V_DS

Parameter

Drain-Source Voltage

Max.

Units

V_GS

Gate-to-Source Voltage

± 20

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

120

2.5

P_D@T_A= 25°C

P_D@T_A= 70°C

1.6

0.02

W/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance

Symbol

R_θJL

Parameter

Junction-to-Drain Lead

Typ.

–––

Max.

Units

R_θJA

Junction-to-Ambient

–––

°C/W

Notes through are on page 8

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June 30, 2014

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