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IRF7458PBF PDF预览

IRF7458PBF

更新时间: 2024-11-14 04:44:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体开关晶体管功率场效应晶体管脉冲光电二极管局域网
页数 文件大小 规格书
8页 130K
描述
SMPS MOSFET

IRF7458PBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, SO-8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.16
其他特性:AVALANCHE RATED雪崩能效等级(Eas):280 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):14 A最大漏极电流 (ID):14 A
最大漏源导通电阻:0.008 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MS-012AAJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2.5 W
最大脉冲漏极电流 (IDM):110 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF7458PBF 数据手册

 浏览型号IRF7458PBF的Datasheet PDF文件第2页浏览型号IRF7458PBF的Datasheet PDF文件第3页浏览型号IRF7458PBF的Datasheet PDF文件第4页浏览型号IRF7458PBF的Datasheet PDF文件第5页浏览型号IRF7458PBF的Datasheet PDF文件第6页浏览型号IRF7458PBF的Datasheet PDF文件第7页 
PD- 95268  
IRF7458PbF  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
l High Frequency Isolated DC-DC  
VDSS  
30V  
RDS(on) max  
ID  
14A  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
l High Frequency Buck Converters for  
Computer Processor Power  
8.0mΩ  
l Lead-Free  
A
A
D
1
2
3
4
8
7
Benefits  
S
S
S
G
D
l Ultra-Low Gate Impedance  
l Very Low RDS(on)  
l Fully Characterized Avalanche Voltage  
and Current  
6
5
D
D
SO-8  
Top View  
Absolute Maximum Ratings  
Symbol  
VDS  
Parameter  
Drain-Source Voltage  
Max.  
30  
± 30  
Units  
V
V
VGS  
Gate-to-Source Voltage  
ID @ TA = 25°C  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
14  
ID @ TA = 70°C  
11  
A
IDM  
110  
PD @TA = 25°C  
PD @TA = 70°C  
Maximum Power Dissipationƒ  
Maximum Power Dissipationƒ  
Linear Derating Factor  
2.5  
W
W
1.6  
0.02  
mW/°C  
°C  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
Thermal Resistance  
Symbol  
RθJL  
RθJA  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient „  
Typ.  
–––  
Max.  
20  
Units  
–––  
50  
°C/W  
Notes  through „are on page 8  
www.irf.com  
1
8/17/04  

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型号 品牌 替代类型 描述 数据表
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完全替代

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