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IRF7456TRPBF PDF预览

IRF7456TRPBF

更新时间: 2024-11-14 14:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网PC开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 210K
描述
Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

IRF7456TRPBF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.84Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:989343
Samacsys Pin Count:8Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:IRF7456TRPBF-1
Samacsys Released Date:2018-12-01 12:13:55Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):250 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):16 A最大漏源导通电阻:0.0065 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MS-012AA
JESD-30 代码:R-PDSO-G8湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):130 A
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF7456TRPBF 数据手册

 浏览型号IRF7456TRPBF的Datasheet PDF文件第2页浏览型号IRF7456TRPBF的Datasheet PDF文件第3页浏览型号IRF7456TRPBF的Datasheet PDF文件第4页浏览型号IRF7456TRPBF的Datasheet PDF文件第5页浏览型号IRF7456TRPBF的Datasheet PDF文件第6页浏览型号IRF7456TRPBF的Datasheet PDF文件第7页 
PD - 95249A  
IRF7456PbF  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
VDSS  
20V  
RDS(on) max  
ID  
16A  
l High Frequency DC-DC Converters  
with Synchronous Rectification  
l Lead-Free  
0.0065Ω  
Benefits  
A
A
l Ultra-Low RDS(on) at 4.5V VGS  
l Low Charge and Low Gate Impedance to  
Reduce Switching Losses  
l Fully Characterized Avalanche Voltage  
and Current  
1
2
8
7
D
D
D
D
S
S
S
G
3
4
6
5
SO-8  
Top View  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
VDS  
Drain-Source Voltage  
20  
V
VGS  
Gate-to-Source Voltage  
± 12  
V
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
16  
13  
A
130  
PD @TA = 25°C  
PD @TA = 70°C  
Maximum Power Dissipationƒ  
Maximum Power Dissipationƒ  
Linear Derating Factor  
2.5  
W
W
1.6  
0.02  
W/°C  
°C  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
Thermal Resistance  
Parameter  
Maximum Junction-to-Ambient„  
Max.  
50  
Units  
°C/W  
RθJA  
Typical SMPS Topologies  
l Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers  
Notes  through „are on page 8  
www.irf.com  
1
08/08/08  

IRF7456TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF7456PBF INFINEON

类似代替

SMPS MOSFET
IRF7456 INFINEON

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Power MOSFET(Vdss=20V, Rds(on)max=0.0065ohm, Id=16A)
IRF7456TR INFINEON

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Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Me

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