是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SO-8 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.27 | 其他特性: | ULTRA-LOW RESISTANCE |
雪崩能效等级(Eas): | 265 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (ID): | 15 A |
最大漏源导通电阻: | 0.007 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | MS-012AA | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e0 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 245 | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 120 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRF7457TR | INFINEON |
功能相似 |
Power Field-Effect Transistor, 15A I(D), 20V, 0.007ohm, 1-Element, N-Channel, Silicon, Met | |
IRF7457PBF | INFINEON |
功能相似 |
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF7457PBF | INFINEON |
获取价格 |
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max | |
IRF7457PBF-1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
IRF7457TR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 15A I(D), 20V, 0.007ohm, 1-Element, N-Channel, Silicon, Met | |
IRF7457TRPBF-1 | INFINEON |
获取价格 |
Power Field-Effect Transistor | |
IRF7458 | INFINEON |
获取价格 |
Power MOSFET(Vdss=30V, Rds(on)max=8.0mohm, Id=14A) | |
IRF7458PBF | INFINEON |
获取价格 |
SMPS MOSFET | |
IRF7458TR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Met | |
IRF7458TRPBF | INFINEON |
获取价格 |
High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and In | |
IRF7459 | INFINEON |
获取价格 |
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=12A) | |
IRF7459PBF | INFINEON |
获取价格 |
HEXFET Power MOSFET |