Datasheet > IRF7455TR

IRF7455TR

更新时间： 2024-05-23 22:23:26

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	371K
描述
种类:N-Channel;漏源电压（Vdss）:40V;持续漏极电流（Id）（在25°C时）:15A;Vgs(th)(V):±12;漏源导通电阻:7.5mΩ@10V;漏源导通电阻:9mΩ@4.5V

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IRF7455TR 数据手册

UMW

IRF7455

Features

VDS (V) = 30V

RDS(ON)

7.5m

9 m

(VGS = 10V)

(VGS = 4.5V)

Applications

High Frequency DC-DC Converters

with Synchronous Rectification

Lead-Free

Top View

Benefits

Ultra-Low Gate Impedance

Very Low R_DS(on)at 4.5V V

Fully Characterized Avalanche Voltage and Current

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

Drain-Source Voltage

V_GS

Gate-to-Source Voltage

± 12

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

120

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation

Linear Derating Factor

2.5

1.6

0.02

W/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

R_θJA

°C/W

Junction-to-Ambient

Notes:

Repetitive rating; pulse width limited by

max. junction temperature.

Starting T_J= 25°C, L = 9.4mH

R_G= 25Ω, I_AS= 8.0A.

Pulse width 400µs; duty cycle 2%.

≤

When mounted on 1 inch square copper board, t<10 sec

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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