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IRF7456PBF-1_15 PDF预览

IRF7456PBF-1_15

更新时间: 2024-11-21 01:19:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 197K
描述
Industry-standard pinout SO-8 Package

IRF7456PBF-1_15 数据手册

 浏览型号IRF7456PBF-1_15的Datasheet PDF文件第2页浏览型号IRF7456PBF-1_15的Datasheet PDF文件第3页浏览型号IRF7456PBF-1_15的Datasheet PDF文件第4页浏览型号IRF7456PBF-1_15的Datasheet PDF文件第5页浏览型号IRF7456PBF-1_15的Datasheet PDF文件第6页浏览型号IRF7456PBF-1_15的Datasheet PDF文件第7页 
SMPS MOSFET  
IRF7456PbF-1  
HEXFET® Power MOSFET  
VDS  
20  
0.0065  
41  
V
Ω
A
A
D
1
RDS(on) max  
(@VGS = 10V)  
Qg (typical)  
ID  
8
S
2
7
S
D
nC  
A
3
6
S
D
16  
4
5
G
D
(@TA = 25°C)  
SO-8  
Top View  
Applications  
lHigh Frequency DC-DC Converters with Synchronous Rectification  
Features  
Benefits  
Industry-standard pinout SO-8 Package  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant, Halogen-Free  
MSL1, Industrial qualification  
Multi-Vendor Compatibility  
Easier Manufacturing  
Environmentally Friendlier  
Increased Reliability  
Base Part Number  
Standard Pack  
Form  
Package Type  
Orderable Part Number  
Quantity  
Tube/Bulk  
Tape and Reel  
95  
4000  
IRF7456PbF-1  
IRF7456TRPbF-1  
IRF7456PbF-1  
SO-8  
Absolute Maximum Ratings  
Symbol  
VDS  
Parameter  
Drain-Source Voltage  
Max.  
20  
Units  
V
VGS  
Gate-to-Source Voltage  
± 12  
16  
V
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Maximum Power Dissipationƒ  
Maximum Power Dissipationƒ  
Linear Derating Factor  
13  
A
130  
2.5  
PD @TA = 25°C  
PD @TA = 70°C  
W
W
1.6  
0.02  
W/°C  
°C  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
Thermal Resistance  
Parameter  
Maximum Junction-to-Ambient„  
Max.  
50  
Units  
°C/W  
RθJA  
TypicalSMPSTopologies  
l Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers  
Notes  through „are on page 8  
1
www.irf.com © 2013 International Rectifier  
Submit Datasheet Feedback  
November 20, 2013  

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